In recent years, using the ultra-vacuum PECVD system, we have successfully prepared the nano-crystalline silicon films (nc-Si:H). The nc-Si:H films are composed of a mass of fine microcrystallites with the mean grain ...In recent years, using the ultra-vacuum PECVD system, we have successfully prepared the nano-crystalline silicon films (nc-Si:H). The nc-Si:H films are composed of a mass of fine microcrystallites with the mean grain size of 3—5nm and the volume crystalline fraction of X_c=(50±5)%. The spacing between grains is constituted by a great number of interfaces, as shown in fig. 1. From the figure, it is estimated that the thickness of the interfaces is 1—4 atomic layers (≤1nm) and the volume fraction of the interfaces is about 40%. It is obvious that the microstructure of the nc-Si:H films is quite diffe展开更多
基金Project supported by the National Natural Science Foundation of China and the Science Foundation of Aeronautics Department, BNAA.
文摘In recent years, using the ultra-vacuum PECVD system, we have successfully prepared the nano-crystalline silicon films (nc-Si:H). The nc-Si:H films are composed of a mass of fine microcrystallites with the mean grain size of 3—5nm and the volume crystalline fraction of X_c=(50±5)%. The spacing between grains is constituted by a great number of interfaces, as shown in fig. 1. From the figure, it is estimated that the thickness of the interfaces is 1—4 atomic layers (≤1nm) and the volume fraction of the interfaces is about 40%. It is obvious that the microstructure of the nc-Si:H films is quite diffe
