摘要
基于硅压阻效应,利用微电子机械系统(MEMS)技术,研制了一种可用于多种领域的高温绝压压力传感器。为了达到耐高温的目标,传感器芯片采用绝缘体上硅(SOI)硅片加工,并利用有限元软件ANSYS对传感器芯片结构进行了应力仿真分析。同时,对传感器的电阻结构、金属布线系统、传感器支撑层键合技术及流片工艺进行了设计,完成了芯片的加工。设计了传感器耐高温封装结构,完成了传感器的初级封装。最后,对常规MEMS压力传感器及研制的高温压力传感器的基本性能、电阻温度特性、漏电流温度特性进行了测试和对比,实验结果表明研制的高温压力传感器能够耐受350℃的高温。
Based on the silicon piezoresistive effect,a high temperature absolute pressure sensor was prepared by the micro-electromechanical system（MEMS） technology.In order to achieve the high temperature resistant,the chip of the sensor was fabricated based on the silicon on insulator（SOI） wafer.The stress simulation analysis of the chip structure of the sensor was conducted using the finite element software ANSYS.Meanwhile,the piezoresistance structure,metal wiring system,support layer bonding technology and process flow of the sensor were designed,and the fabrication of the chips was completed.The high temperature resistant packaging structure was designed,and the primary packaging of the sensor was achieved.Finally,the basic performances,resistance-temperature properties and leakage current temperature properties of the high temperature pressure sensor and normal MEMS pressure sensor were measured and compared.The experiment result shows that the high temperature resistant pressure sensor can work at high temperature of 350 ℃.
出处
《微纳电子技术》
北大核心
2016年第6期387-393,共7页
Micronanoelectronic Technology
