Si p^+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a trans...Si p^+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.展开更多
硅基光电子有着与互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺兼容的优势,借助现有成熟的硅工业体系可以实现从理论设计到产品制造的快速转化。通过光互连与电互联的相互结合、取长补短,克服现有材料的限...硅基光电子有着与互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺兼容的优势,借助现有成熟的硅工业体系可以实现从理论设计到产品制造的快速转化。通过光互连与电互联的相互结合、取长补短,克服现有材料的限制,发挥新兴材料的优势,体现光电子集成在后摩尔时代高效化信息处理方面的优势。硅基光互连的实现需要依托于与当前集成电路制造工艺兼容的高效硅基片上光源。概述了后摩尔时代硅基片上光源的研究进展与面临的困难,重点介绍了本研究组在硅量子点(quantum dot,QD)光源、硅锗基光源、硅基应变锗光源等方面的研究进展。展开更多
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61704019)
文摘Si p^+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.
文摘硅基光电子有着与互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺兼容的优势,借助现有成熟的硅工业体系可以实现从理论设计到产品制造的快速转化。通过光互连与电互联的相互结合、取长补短,克服现有材料的限制,发挥新兴材料的优势,体现光电子集成在后摩尔时代高效化信息处理方面的优势。硅基光互连的实现需要依托于与当前集成电路制造工艺兼容的高效硅基片上光源。概述了后摩尔时代硅基片上光源的研究进展与面临的困难,重点介绍了本研究组在硅量子点(quantum dot,QD)光源、硅锗基光源、硅基应变锗光源等方面的研究进展。
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
