摘要
Si p^+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.
Si p^+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400–900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p–n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.
作者
Yanxu Chen
Dongliang Xu
Kaikai Xu
Ning Zhang
Siyang Liu
Jianming Zhao
Qian Luo
陈彦旭;许栋梁;徐开凯;张宁;刘斯扬;赵建明;罗谦;Lukas W.Snyman;Jacobus W.Swart(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China;Department of Electrical Engineering,University of South Africa,Pretoria 0001,South Africa;Faculty of Electrical and Computer Engineering,State University of Campinas-UNICAMP,Campinas CEP 13083-852,Brazil)
基金
Project supported by the National Natural Science Foundation of China(Grant No.61704019)
