We propose an optically pumped nonpolar GaN/AlGaN quantum well（QW） active region design for terahertz（THz） lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature.The fast longitudinal ...We propose an optically pumped nonpolar GaN/AlGaN quantum well（QW） active region design for terahertz（THz） lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature.The fast longitudinal optical（LO） phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state,and more importantly,the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures.The influences of temperature and pump intensity on gain and electron densities are investigated.Based on our simulations,we predict that with a sufficiently high pump intensity,a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.展开更多
子带跃迁的量子阱结构太赫兹探测器具有响应速度快等特点,有广泛的应用前景,越来越受到研究人员的关注。以量子力学基本原理,量子阱结构材料光吸收的特性,以及光导型探测器暗电流分析为基础,进行了量子阱厚度、势垒层Al含量和量子阱掺...子带跃迁的量子阱结构太赫兹探测器具有响应速度快等特点,有广泛的应用前景,越来越受到研究人员的关注。以量子力学基本原理,量子阱结构材料光吸收的特性,以及光导型探测器暗电流分析为基础,进行了量子阱厚度、势垒层Al含量和量子阱掺杂浓度等参数的Al Ga As/Ga As量子阱太赫兹探测材料结构设计,按照优化后的外延参数进行了材料生长,获得了符合设计要求的探测材料。展开更多
基金Project supported in part by the National Major Basic Research Program of China (Grant No. 2011CB925603)the Shanghai Municipal Major Basic Research Project (Grant No. 09DJ1400102)
文摘We propose an optically pumped nonpolar GaN/AlGaN quantum well（QW） active region design for terahertz（THz） lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature.The fast longitudinal optical（LO） phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state,and more importantly,the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures.The influences of temperature and pump intensity on gain and electron densities are investigated.Based on our simulations,we predict that with a sufficiently high pump intensity,a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.
文摘子带跃迁的量子阱结构太赫兹探测器具有响应速度快等特点,有广泛的应用前景,越来越受到研究人员的关注。以量子力学基本原理,量子阱结构材料光吸收的特性,以及光导型探测器暗电流分析为基础,进行了量子阱厚度、势垒层Al含量和量子阱掺杂浓度等参数的Al Ga As/Ga As量子阱太赫兹探测材料结构设计,按照优化后的外延参数进行了材料生长,获得了符合设计要求的探测材料。
