摘要
为了进一步优化半导体激光器的性能,讨论了影响激光器中许多参数的能带结构.以InGaAs/GaAs应变量子阱材料为例,利用有限差分法对考虑价带混合效应的6×6 Luttinger-Kohn哈密顿量精确求解,得到导带和价带的能带结构图.计算结果表明,应变改变了传统无应变量子阱激光器中轻的导带有效质量与非常重的价带有效质量之间的巨大不对称性,更有利于提高激光器的性能.
In order to further optimize the performance of semiconductor lasers,the band structure which influences many parameters of semiconductor lasers is discussed.Taking the InGaAs/GaAs strained quantum wells for an example,we obtain the conduction-band structures and the valence-band structures by using the finite difference method to solve the problem of 6×6 Luttinger-Kohn Hamiltonian which is considered the valence band mixing effect.The results show that the strain has changed the huge asymmetry between the light conduction band effective mass and the very heavy valence band effective mass in the traditional unstrained quantum well lasers.It is more conducive to improving the laser performance.
出处
《北京工业大学学报》
EI
CAS
CSCD
北大核心
2011年第4期565-569,共5页
Journal of Beijing University of Technology
基金
国家自然科学基金资助项目(60678010)
