摘要
本文通过自洽地求解薛定鄂方程及泊松方程计算了在温度T=0,有效质量近似下,Si均匀掺杂的GaAs/AlGaAs量子阱系统的电子态结构.研究了掺杂浓度及掺杂层厚度对子带能量,本征包络函数,自洽势,电子密度分布,及费米能量的影响.发现在给定掺杂浓度下,子带能量随掺杂层厚度的增加单调递减,自洽势的势阱变宽变浅,电子密度分布变宽,峰值变低;在给定掺杂层厚度下,随掺杂浓度的增加子带能量及费米能级单调递增,自洽势阱变深变陡变窄,电子密度分布的峰值变高,集中在中心.
By solving Schrodinger equation and Poisson equation self-consistently, we have calculated the electronic structure for Si-doped GaAs/AlGaAs quantum well system at T = 0 in the effective mass approximation. We studied the influence of the doping concentration and the thickness of the doping layer on the subband energies, eigen-envelope functions, Hartree potential, density distribution of the electrons, and the Fermi energy. It is found that at the given doping concentration, the subband energies decrease with the increase of the doping thickness, the width of the self consistent potential well increase, the deepth of the well decrease, the distribution of the electron density becomes wider, the peak value reduced. At the given thickness of the doping layer, with the increase of the doping concentration, the subband energies and Fermi energy monotonically increase, the self consistent potential well becomes narrower and deeper, the peak of the electron density distribution becomes higher, and concentrated around the center of the well.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2013年第15期395-401,共7页
Acta Physica Sinica
关键词
掺杂
量子阱
电子结构
半导体GaAs
doping
quantum well
electronic structure
semiconductor GaAs
