摘要
用高温熔融法在 Sb_(12)Ge_(28)Se_(60)玻璃中掺入 Fe 和 Cu。对 Cu_x(Sb_(12)Ge_(28)(Se_(60))_(100-x)系统玻璃,当 Cu 含量为5 at%时,电导率提高3.4个数量级,电导活化能下降0.23eV。分析表明,Cu 引入后与母体玻璃中的阴离子形成了正常结构键合的共价键,各元素的价键均得到满足,电导活化能的下降是由于禁带宽度降低导致(E_f-E_v)值下降所致。对 Fe_x(Sb_(12)Ge_(28)Se_(60))_(100-x)系统玻璃,DSC 与 SEM 的测定表明,Fe 引入后玻璃产生了分相。当 Fe 含量为2 at%时,电导率增加了6.3个数量级,电导活化能则下降0.61eV,光声子谱的分析表明,E_(opt)仅下降了0.04eV。根据这些数据和 ESR 的测定结果得出了该系统玻璃的能带结构模型,导致电导率激增的原因是由于 Fe^(2+)(d^(?))施主缺陷态的形成。
Copper and iron were doped into the Sb_(12)Ge_(28)Se_(?) glasses by melting method.For copper-doped glasses,when the content of Cu reaches 5at%,the conductivityincreases 3.4 orders of magnitude and the thermal activation energy decreases0.32 eV.Analyses indicated that Cu atoms form normal structural bonds with thelone pair electrons of Se atoms and each atom in the glasses fully satisfies its owncoordination.For iron-doped glasses,the results of DSC and SEM indicated thatphase separations take place in the glasses.When the content of Fe is 2at%,theconductivity increases 6.3 orders of magnitude and the thermal activation energydecreases 0.61eV,the photoacoustic spectra indicated that the optical gap decreases0.04eV.Based on these data and the results of ESR,a model of the band structureof iron-doped glasses was proposed.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第2期145-150,共6页
Journal of Inorganic Materials
关键词
半导体
硫系
玻璃
掺铁
电导率
Amorphous semiconductors
Chalcogenide
glasses
Iron and copper doped chalcogenide glasses
Conductivity
Electronic band structure
