Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exh...Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/（V.s） by molecular beam epitaxy. The arrayed p-n ）unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.展开更多
In this study,CuBi2O4 photocathodes were prepared using a simple electrodeposition method for photoelectrochemical(PEC)hydrogen production.The prepared photocathodes were modified with amorphous TiO2 and a Pt co‐cata...In this study,CuBi2O4 photocathodes were prepared using a simple electrodeposition method for photoelectrochemical(PEC)hydrogen production.The prepared photocathodes were modified with amorphous TiO2 and a Pt co‐catalyst,which resulted in the formation of CuBi2O4/TiO2 p‐n heterojunctions,and enhanced the activities of the as‐prepared photocathodes.The novel Pt/TiO2/CuBi2O4 photocathode exhibited a photocurrent of 0.35 mA/cm2 at 0.60 V vs.Reversible Hydrogen Electrode(RHE),which was nearly twice that of the Pt/CuBi2O4 photocathode.The present study provides a facile method for increasing the efficiency of photocathodes and provides meaningful guidance for the preparation of high‐performance CuBi2O4 photocathodes.展开更多
基金This work was supported by the National Young 1000 Talent Plan, Pujiang Talent Plan in Shanghai, National Natural Science Foundation of China （Nos. 61322407, 11474058, and 11322441）, the Chinese Na- tional Science Fund for Talent Training in Basic Science （No. J1103204）, and Ten Thousand Talents Program for young talents. Part of the sample fabrication was performed at Fudan Nano-fabrication Laboratory. We acknowledge Yuanbo Zhang, Yizheng Wu, Zuimin Jiang, Likai Li, Boliang Chen for great assistance during the device fabrication and measurements.
文摘Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/（V.s） by molecular beam epitaxy. The arrayed p-n ）unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.
基金the National Natural Science Foundation of China(51602179,21333006,21573135,11374190)the National Basic Research Program of China(973 Program,2013CB632401)~~
文摘In this study,CuBi2O4 photocathodes were prepared using a simple electrodeposition method for photoelectrochemical(PEC)hydrogen production.The prepared photocathodes were modified with amorphous TiO2 and a Pt co‐catalyst,which resulted in the formation of CuBi2O4/TiO2 p‐n heterojunctions,and enhanced the activities of the as‐prepared photocathodes.The novel Pt/TiO2/CuBi2O4 photocathode exhibited a photocurrent of 0.35 mA/cm2 at 0.60 V vs.Reversible Hydrogen Electrode(RHE),which was nearly twice that of the Pt/CuBi2O4 photocathode.The present study provides a facile method for increasing the efficiency of photocathodes and provides meaningful guidance for the preparation of high‐performance CuBi2O4 photocathodes.
