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工业化N型高效双面晶体硅太阳电池扩散工艺研究 被引量:4

Investigation of Doping Profile in Industrial N-type High-efficiency Bifacial Silicon Solar Cells
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摘要 采用磷硼共扩散的方法制备了N型高效双面电池,通过优化背场及发射极扩散工艺,研究了扩散工艺曲线对电池电性能参数的影响机理。实验结果表明,降低背场扩散方块电阻可提高电池填充因子,同时造成开路电压(V_(oc))和短路电流(I_(sc))降低,需要在背场饱和电流密度(J_(0BSF))和填充因子(FF)之间找到一个平衡点;降低发射极表面杂质浓度和方块电阻并适当的增加结深,可改善与金属化栅线的接触。正面采用低浓度深结扩散工艺可改善V_(oc)和FF,减少复合,提高Isc,电池效率增加了0.2%,平均效率达到20.41%。 N-type high-efficiency bifacial solar cells were fabricated by co-diffusing phosphorous and boron.The effect of the diffusion on the electrical performance was investigated by optimizing the emitter and the back surface field(BSF).The results showed that fill factor(FF)increased,while the open-circuit voltage(Voc)and the short-circuit current(Isc)decreased as a result of the decrease of sheet resistance of BSF.There was a balance between BSF saturation current density(J0BSF)and FF.The contact of metallization was improved by decreasing emitter peak concentration and sheet resistance with a suitable deeper junction.Lower peak concentration with deeper junction could improve Voc,FFand Isc.The cells′efficiency increases 0.2%,and the average efficiency could reach 20.41%.
出处 《光电子技术》 CAS 2017年第2期124-128,共5页 Optoelectronic Technology
基金 青海省科技厅企业研究转化与产业化专项(2016-GX-C13)
关键词 N型 硼扩散 掺杂浓度 P-N结 电池效率 N-type boron diffusion doping concentration p-n junction cell efficiency
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