Well adhered C 3N 4 films were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) on industrial pure iron substrates using ternary Si N C films as buffer layer. XRD measurement showed that the C 3N 4 ...Well adhered C 3N 4 films were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) on industrial pure iron substrates using ternary Si N C films as buffer layer. XRD measurement showed that the C 3N 4 films belong to the α C 3N 4 phase. Electrochemical experiments showed that the corrosive resistance of the pure iron raised by two orders of magnitude after being covered with the α C 3N 4 coating.展开更多
Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor de- position (MPCVD) technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of ...Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor de- position (MPCVD) technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of C_3N_4. The experimental X-ray diffraction spectra contain all the strong peaks of α-C_3N_4 and β -C_3N_4. The films are a mixture of α-C_3N_4 and β -C_3N_4. The observed Raman and FT- IR spectra support the existence of C-N covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349 GPa.展开更多
Carbon nitride films,especially β-C<sub>3</sub>N<sub>4</sub>, as a new predicted superhard material,havebeen studied extensively during the past several years since they exhibit potentialphysi...Carbon nitride films,especially β-C<sub>3</sub>N<sub>4</sub>, as a new predicted superhard material,havebeen studied extensively during the past several years since they exhibit potentialphysical and chemical properties.In consideration of the thermal behavior of CN<sub>x</sub>films,much attention has been focused on the influence of temperatures at substrate on de-positing process.However,we have not obtained sufficient information concerningthermal behavior of CN<sub>x</sub> films annealed in air for a long time,particularly the展开更多
OPTICAL emission spectroscopy (OES) is generally used in diagnosis on the various plasma filmdeposition processes to understand the mechanism of film growth. However, although the de-position precursors have been pred...OPTICAL emission spectroscopy (OES) is generally used in diagnosis on the various plasma filmdeposition processes to understand the mechanism of film growth. However, although the de-position precursors have been predicted such as CN radicals and nitrogen atoms, up tonow no diagnostic work on CN_x film deposition process, as we know, has been reported yet.From previously reported research work, the properties of CN_x film display some obvious dif-ference. For instance, some CN_x films have extreme mechanical properties with hardness展开更多
Composite SiNx/DLC films were deposited on Si substrate by RF magnetron sputtering of silicon nitride (Si3N4) target simultaneously with filtered cathode arc (FCA) of graphite. The RF power was fixed at 100 W whereas ...Composite SiNx/DLC films were deposited on Si substrate by RF magnetron sputtering of silicon nitride (Si3N4) target simultaneously with filtered cathode arc (FCA) of graphite. The RF power was fixed at 100 W whereas the arc currents of FCA were 20, 40, 60 and 80 A. The effects of arc current on the structure, surface roughness, density and mechanical properties of SiNx/DLC films were investigated. The results show that the arc current in the studied range has effect on the structure, surface roughness, density and mechanical properties of composite SiNx/DLC films. The composite SiNx/DLC films show the sp3 content between 53.5% and 66.7%, density between 2.54 and2.98 g/cm3, stress between 1.7 and 2.2 GPa, and hardness between 35 and 51 GPa. Furthermore, it was found that the density, stress and hardness correlate linearly with the sp3 content for composite SiNx/DLC films.展开更多
文摘Well adhered C 3N 4 films were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) on industrial pure iron substrates using ternary Si N C films as buffer layer. XRD measurement showed that the C 3N 4 films belong to the α C 3N 4 phase. Electrochemical experiments showed that the corrosive resistance of the pure iron raised by two orders of magnitude after being covered with the α C 3N 4 coating.
文摘Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor de- position (MPCVD) technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of C_3N_4. The experimental X-ray diffraction spectra contain all the strong peaks of α-C_3N_4 and β -C_3N_4. The films are a mixture of α-C_3N_4 and β -C_3N_4. The observed Raman and FT- IR spectra support the existence of C-N covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349 GPa.
基金Project supported by the National Natural Science Foundation of China and Beijing Zhongguancun Associated Center of Analysis and Measurement.
文摘Carbon nitride films,especially β-C<sub>3</sub>N<sub>4</sub>, as a new predicted superhard material,havebeen studied extensively during the past several years since they exhibit potentialphysical and chemical properties.In consideration of the thermal behavior of CN<sub>x</sub>films,much attention has been focused on the influence of temperatures at substrate on de-positing process.However,we have not obtained sufficient information concerningthermal behavior of CN<sub>x</sub> films annealed in air for a long time,particularly the
文摘OPTICAL emission spectroscopy (OES) is generally used in diagnosis on the various plasma filmdeposition processes to understand the mechanism of film growth. However, although the de-position precursors have been predicted such as CN radicals and nitrogen atoms, up tonow no diagnostic work on CN_x film deposition process, as we know, has been reported yet.From previously reported research work, the properties of CN_x film display some obvious dif-ference. For instance, some CN_x films have extreme mechanical properties with hardness
文摘Composite SiNx/DLC films were deposited on Si substrate by RF magnetron sputtering of silicon nitride (Si3N4) target simultaneously with filtered cathode arc (FCA) of graphite. The RF power was fixed at 100 W whereas the arc currents of FCA were 20, 40, 60 and 80 A. The effects of arc current on the structure, surface roughness, density and mechanical properties of SiNx/DLC films were investigated. The results show that the arc current in the studied range has effect on the structure, surface roughness, density and mechanical properties of composite SiNx/DLC films. The composite SiNx/DLC films show the sp3 content between 53.5% and 66.7%, density between 2.54 and2.98 g/cm3, stress between 1.7 and 2.2 GPa, and hardness between 35 and 51 GPa. Furthermore, it was found that the density, stress and hardness correlate linearly with the sp3 content for composite SiNx/DLC films.
