In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanis...In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.展开更多
We have carried out magneto-transport measurements for single crystal SrMnSb2. Clear Shubnikov-de Haas oscil- lations were resolved at relatively low magnetic field around 4 T, revealing a quasi-2D Fermi surface. We o...We have carried out magneto-transport measurements for single crystal SrMnSb2. Clear Shubnikov-de Haas oscil- lations were resolved at relatively low magnetic field around 4 T, revealing a quasi-2D Fermi surface. We observed a development of quantized plateaus in Hall resistance （Rxy） at high pulsed fields up to 60 T. Due to the strong 2D confine- ment and layered properties of the samples, we interpreted the observation as bulk quantum Hall effect that is contributed by the parallel 2D conduction channels. Moreover, the spin degeneracy was lifted leading to Landau level splitting. The presence of anisotropic g factor and the formation of the oscillation beating pattern reveal a strong spin-orbit interaction in the SrMnSb2 system.展开更多
基金Project supported by the National Basic Research Program of China (Grant No. 2011CBA00604)
文摘In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFA0303302)the National Natural Science Foundation of China(Grant Nos.61322407,11474058,and 61674040)
文摘We have carried out magneto-transport measurements for single crystal SrMnSb2. Clear Shubnikov-de Haas oscil- lations were resolved at relatively low magnetic field around 4 T, revealing a quasi-2D Fermi surface. We observed a development of quantized plateaus in Hall resistance （Rxy） at high pulsed fields up to 60 T. Due to the strong 2D confine- ment and layered properties of the samples, we interpreted the observation as bulk quantum Hall effect that is contributed by the parallel 2D conduction channels. Moreover, the spin degeneracy was lifted leading to Landau level splitting. The presence of anisotropic g factor and the formation of the oscillation beating pattern reveal a strong spin-orbit interaction in the SrMnSb2 system.
