The in-plane anisotropy of transition metal trichalcogenides(MX_(3))has a significant impact on the molding of materi-als and MX_(3) is a perfect choice for polarized photodetectors.In this study,the crystal structure...The in-plane anisotropy of transition metal trichalcogenides(MX_(3))has a significant impact on the molding of materi-als and MX_(3) is a perfect choice for polarized photodetectors.In this study,the crystal structure,optical and optoelectronic aniso-tropy of one kind of quasi-one-dimensional(1D)semiconductors,ZrSe_(3),are systematically investigated through experiments and theoretical studies.The ZrSe_(3)-based photodetector shows impressive wide spectral response from ultraviolet(UV)to near in-frared(NIR)and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W^(-1) and detectivity of~106 at 532 nm.Moreover,the dichroic ratio of ZrSe_(3)-based polarized photodetector is around 1.1 at 808 nm.This study suggests that ZrSe_(3) has potential in optoelectronic applications and polarization detectors.展开更多
Tuning the bandgap in layered transition metal dichalcogenides(TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic...Tuning the bandgap in layered transition metal dichalcogenides(TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic properties of TMDCs, because the multi-elemental characteristics provide additional tunability at the atomic level and advantageously alter the physical properties of TMDCs. Herein, ternary Ti_(x)Zr_(1-x)Se_(2) single crystals were synthesized using the chemical-vapor-transport method. The changes in electronic structures of ZrSe_(2) induced by Ti substitution were revealed using angle-resolved photoemission spectroscopy. Our data show that at a low level of Ti substitution, the bandgap of Ti_(x)Zr_(1-x)Se_(2) decreases monotonically, and the electronic system undergoes a transition from a semiconducting to a metallic state without a significant variation of dispersions of valence bands. Meanwhile, the size of spin-orbit splitting dominated by Se 4p orbitals decreases with the increase of Ti doping. Our work shows a convenient way to alter the bandgap and spin-orbit coupling in TMDCs at the low level of substitution of transition metals.展开更多
基金financially supported by the National Key Research and Development Program of China (Grant No.2017YFA0207500)the National Natural Science Foundation of China (Grant No. 62125404, 12004375, 62004193,62174155)+1 种基金the CAS-JSPS Cooperative Research Project (No.GJHZ2021131)the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB43000000)
文摘The in-plane anisotropy of transition metal trichalcogenides(MX_(3))has a significant impact on the molding of materi-als and MX_(3) is a perfect choice for polarized photodetectors.In this study,the crystal structure,optical and optoelectronic aniso-tropy of one kind of quasi-one-dimensional(1D)semiconductors,ZrSe_(3),are systematically investigated through experiments and theoretical studies.The ZrSe_(3)-based photodetector shows impressive wide spectral response from ultraviolet(UV)to near in-frared(NIR)and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W^(-1) and detectivity of~106 at 532 nm.Moreover,the dichroic ratio of ZrSe_(3)-based polarized photodetector is around 1.1 at 808 nm.This study suggests that ZrSe_(3) has potential in optoelectronic applications and polarization detectors.
基金supported by the National Key R&D Program of China (Grant No. 2017YFA0402901)the National Natural Science Foundation of China (Grant No. U2032153)+2 种基金the International Partnership Program (Grant No. 211134KYSB20190063)the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB25000000)the USTC Research Funds of the Double First-Class Initiative (Grant No. YD2310002004)。
文摘Tuning the bandgap in layered transition metal dichalcogenides(TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic properties of TMDCs, because the multi-elemental characteristics provide additional tunability at the atomic level and advantageously alter the physical properties of TMDCs. Herein, ternary Ti_(x)Zr_(1-x)Se_(2) single crystals were synthesized using the chemical-vapor-transport method. The changes in electronic structures of ZrSe_(2) induced by Ti substitution were revealed using angle-resolved photoemission spectroscopy. Our data show that at a low level of Ti substitution, the bandgap of Ti_(x)Zr_(1-x)Se_(2) decreases monotonically, and the electronic system undergoes a transition from a semiconducting to a metallic state without a significant variation of dispersions of valence bands. Meanwhile, the size of spin-orbit splitting dominated by Se 4p orbitals decreases with the increase of Ti doping. Our work shows a convenient way to alter the bandgap and spin-orbit coupling in TMDCs at the low level of substitution of transition metals.
