摘要
近年来,基于层状材料的光电探测器由于其独特的光电性能和巨大的应用潜力而备受关注。本文通过机械剥离单晶的方法获得了ZrSe;纳米带,并对其光电性能进行了研究。实验发现,ZrSe;纳米带在405 nm和980 nm波长下具有良好的光电响应。在偏置电压为5 V时,405 nm激光照射下的响应时间低于0.03 s,而980 nm激光照射下的响应时间也可以达到0.45s。结果表明,基于ZrSe;纳米带的光电探测器在可见光到近红外光范围内具有一定的应用潜力。
Photodetectors based on layered materials have received much attention due to their unique photoelectronic properties and potential application. In this work, we obtained ZrSe;nanobelt by the mechanical exfoliation method, and measured the photoelectronic properties. It was found that the ZrSe;nanobelt has good photoelectronic responses. At a bias voltage of 5 V, the response time can be less than 0.03 s under 405 nm laser and 0.45 s under 980 nm laser. Our result indicates that ZrSe;photodetector may have good application potential in the range of visible light to near infrared.
作者
万家捷
Wan Jiajie(Southwest university,Chongqing 400715,China)
出处
《科学技术创新》
2022年第6期38-41,共4页
Scientific and Technological Innovation
