In this paper, we explore the possibility of mapping devices designed in TCAD environment to its modeled version developed in cadence virtuoso environment using a look-up table （LUT） approach. Circuit simu- lation o...In this paper, we explore the possibility of mapping devices designed in TCAD environment to its modeled version developed in cadence virtuoso environment using a look-up table （LUT） approach. Circuit simu- lation of newly designed devices in TCAD environment is a very slow and tedious process involving complex scripting. Hence, the LUT based modeling approach has been proposed as a faster and easier alternative in ca- dence environment. The LUTs are prepared by extracting data from the device characteristics obtained from device simulation in TCAD. A comparative study is shown between the TCAD simulation and the LUT-based alternative to showcase the accuracy of modeled devices. Finally the look-up table approach is used to evaluate the perform- ance of circuits implemented using 14 nm nMOSFET.展开更多
针对传统模数转换器(analog to digital convertor,ADC)设计复杂度高、仿真迭代时间长的问题,提出了一种高精度ADC系统设计与建模方法。该方法以10 bit 50 MHz流水线ADC为例,首先选取分离采样架构,进行电路的s域变换理论分析;其次对电...针对传统模数转换器(analog to digital convertor,ADC)设计复杂度高、仿真迭代时间长的问题,提出了一种高精度ADC系统设计与建模方法。该方法以10 bit 50 MHz流水线ADC为例,首先选取分离采样架构,进行电路的s域变换理论分析;其次对电路中各种非理想噪声的表达式进行精确推导,根据系统中的运放功耗指标进行参数优化;最后分别在MATLAB和Cadence软件中建立模型,进行100点蒙特卡洛仿真。仿真结果表明,在TSMC 180 nm工艺失配下,该流水线ADC有效位数达到9.70 bit,无杂散动态范围维持在76 dB附近,微分非线性在0.3 LSB以内,积分非线性在0.5 LSB以内,核心功耗在8 mW,该分析方法在保证流水线ADC优异性能的同时,大幅提高了设计效率。展开更多
文摘In this paper, we explore the possibility of mapping devices designed in TCAD environment to its modeled version developed in cadence virtuoso environment using a look-up table （LUT） approach. Circuit simu- lation of newly designed devices in TCAD environment is a very slow and tedious process involving complex scripting. Hence, the LUT based modeling approach has been proposed as a faster and easier alternative in ca- dence environment. The LUTs are prepared by extracting data from the device characteristics obtained from device simulation in TCAD. A comparative study is shown between the TCAD simulation and the LUT-based alternative to showcase the accuracy of modeled devices. Finally the look-up table approach is used to evaluate the perform- ance of circuits implemented using 14 nm nMOSFET.
文摘针对传统模数转换器(analog to digital convertor,ADC)设计复杂度高、仿真迭代时间长的问题,提出了一种高精度ADC系统设计与建模方法。该方法以10 bit 50 MHz流水线ADC为例,首先选取分离采样架构,进行电路的s域变换理论分析;其次对电路中各种非理想噪声的表达式进行精确推导,根据系统中的运放功耗指标进行参数优化;最后分别在MATLAB和Cadence软件中建立模型,进行100点蒙特卡洛仿真。仿真结果表明,在TSMC 180 nm工艺失配下,该流水线ADC有效位数达到9.70 bit,无杂散动态范围维持在76 dB附近,微分非线性在0.3 LSB以内,积分非线性在0.5 LSB以内,核心功耗在8 mW,该分析方法在保证流水线ADC优异性能的同时,大幅提高了设计效率。
