Using blend heterojunction consisting of C60 derivatives [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and poly(3-hexylthiophene) (P3HT) as charge carrier transferring medium to replace I3–/I– redox electrolyte,...Using blend heterojunction consisting of C60 derivatives [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and poly(3-hexylthiophene) (P3HT) as charge carrier transferring medium to replace I3–/I– redox electrolyte,a novel flexible dye-sensitized solar cell (DSSC) is fabricated.The characterization of infrared spectra and ultraviolet-visible spectra shows that the PCBM/P3HT heterojunction has not only the absorption in ultraviolet light for PCBM,but also the absorption in visible and near infrared light for P3HT,which widens the photoelectric response range for DSSC.The influence of PCBM/P3HT mass ratio on the performance of the solar cell is discussed.Under 100 mW cm–2 (AM 1.5) simulated solar irradiation,the flexible solar cell achieves a lightto-electric energy conversion efficiency of 1.43%,open circuit voltage of 0.87 V,short circuit current density of 3.0 mA cm–2 and fill factor of 0.54.展开更多
This work explores the use of poly（3- hexylthiophene） （P3HT） modified carbon nanotubes （CNTs@P3HT） for the cathodes of hole transporter free, mesoscopic perovskite （CH3NH3PbI3） solar cells （PSCs）, simultaneo...This work explores the use of poly（3- hexylthiophene） （P3HT） modified carbon nanotubes （CNTs@P3HT） for the cathodes of hole transporter free, mesoscopic perovskite （CH3NH3PbI3） solar cells （PSCs）, simultaneously achieving high-performance, high stability and low-cost PSCs. Here the thin P3HT modifier acts as an electron blocker to inhibit electron transfer into CNTs and a hydrophobic polymer binder to tightly cross-link the CNTs together to compact the carbon electrode film and greatly stabilize the solar cell. On the other hand, the presence of CNTs greatly improve the conductivity of P3HT. By optimizing the concentration of the P3HT modifier （2 mg/mL）, we have improved the power conversion efficiencies （PCEs） of CNTs@P3HT based PSCs up to 13.43% with an average efficiency of 12.54%, which is much higher than the pure CNTs based PSCs （best PCE 10.59%） and the sandwich-type P3HT/CNTs based PSCs （best PCE 9.50%）. In addition, the hysteresis of the CNTs@P3HT based PSCs is remarkably reduced due to the intimate interface between the perovskite and CNTs@P3HT electrodes. Degradation of the CNTs@ P3HT based PSCs is also strongly retarded as compared to cells employing the pure CNTs electrode when exposed to the ambient condition of 20%- 40% humidity.展开更多
Poly(3-hexylthiophene)(P3HT) is a low-cost polymer donor for organic solar cells (OSCs). However, the P3HT-based OSCs usually give low power conversion efficiencies (PCEs) due to the wide bandgap and the high-lying en...Poly(3-hexylthiophene)(P3HT) is a low-cost polymer donor for organic solar cells (OSCs). However, the P3HT-based OSCs usually give low power conversion efficiencies (PCEs) due to the wide bandgap and the high-lying energy levels of P3HT. To solve this problem, in this work, we design and synthesize a new A-D-A type non-fullerene acceptor, DFPCBR, which owns an electron-donating (D) core constructed by linking a 2,5-difluorobenzene ring with two cyclopentadithiophene moieties, and two electron-accepting (A) end-groups of benzo[c][1,2,5]thiadiazole connected with 3-ethyl-2-thioxothiazolidin-4-one. Because of the strong electron-donating ability and large conjugation effect of D core, DFPCBR shows appropriate energy levels and a narrow bandgap matching well with those of P3HT. Therefore, with P3HT as the donor and DFPCBR as the acceptor, the OSCs possess broad absorption range from 350 nm to 780 nm and the reduced energy loss (Eloss) of 0.79 eV (compared with ~1.40 eV for the P3HT:PC61BM device), providing a good PCE of 5.34% with a high open-circuit voltage (VOC) of 0.80 V. Besides, we observe that the photovoltaic performances of these devices are insensitive to the thickness of the active layers:even if the active layer is as thick as 320 nm,~80%of the best PCE is maintained, which is rarely reported for fullerene-free P3HT-based OSCs, suggesting that DFPCBR has the potential application in commercial OSCs in the future.展开更多
At present,most of state-of-the-art power conversion efficiencies(PCEs)of organic solar cells(OSCs)are achieved from the photoactive materials involving donor–acceptor(D–A)copolymer donors.It is well known that the ...At present,most of state-of-the-art power conversion efficiencies(PCEs)of organic solar cells(OSCs)are achieved from the photoactive materials involving donor–acceptor(D–A)copolymer donors.It is well known that the complicated molecular structure of D–A copolymers means the tedious synthesis,which brings about severe cost issue and poor scalability for the industrial production.Therefore,to develop application-oriented OSCs,considerable attention should be paid on simplifying the chemical structures of polymer donors.Polythiophene(PT)and poly(thiophene vinylene)(PTV)derivatives should be among the simplest polymer donors,and OSCs based on them have made some breakthroughs in past 2 years.Here,we briefly introduce the recent advances of OSCs based on low-cost polymers including poly(3-hexylthiophene)(P3HT),PT derivatives,and PTV derivatives,respectively,and emphasize the importance of modulating energy levels,preaggregation effect,and D/A miscibility for the past progress as well as the future development.At last,we also propose some challenges demanding prompt solution for realizing practical application of OSCs,aiming at providing guidance and stimulating new ideas for further research.展开更多
Poly(3-hexylthiophene)(P3HT)thin films,obtained by normal spin-coating and solvent vapor assisted spin-coating(SVASP)before and after thermal annealing(TA),and the corresponding devices were prepared to unravel the mi...Poly(3-hexylthiophene)(P3HT)thin films,obtained by normal spin-coating and solvent vapor assisted spin-coating(SVASP)before and after thermal annealing(TA),and the corresponding devices were prepared to unravel the microstructure-property relationship,which is of great importance for the development of organic electronics.When SVASP-TA films were used as the active layers of the organic field-effect transistors,a hole mobility up to 0.38 cm^(2)·V^(-1)·s^(-1)was achieved.This mobility was one of the highest values and one order of magnitude higher than that of the normal spin-coating films based transistors.The relationship between the microstructure and the device performance was fully investigated by UV-Vis absorption spectra,grazing incident X-ray diffraction(GIXD),and atomic force microscopy(AFM).The impressive mobility was attributed to the high crystallinity and ordered molecule packing,which stem from the synergistic effects of SVASP and thermal annealing.展开更多
The quantum-dot light-emitting diodes(QLEDs)that emit near-infrared(NIR)light may be important optoelectronic synaptic devices for the realization of artificial neural networks with complete optoelectronic integration...The quantum-dot light-emitting diodes(QLEDs)that emit near-infrared(NIR)light may be important optoelectronic synaptic devices for the realization of artificial neural networks with complete optoelectronic integration.To improve the performance of NIR QLEDs,we take advantage of their low-energy light emission to explore the use of poly(3-hexylthiophene)(P3 HT)as the hole transport layer(HTL).P3 HT has one of the highest hole mobilities among organic semiconductors and essentially does not absorb NIR light.The usage of P3 HT as the HTL indeed significantly mitigates the imbalance of carrier injection in NIR QLEDs.With the additional incorporation of an interlayer of poly[9,9-bis(3’-(N,N-dimethylamino)propyl)-2,7-flourene]-alt-2,7-(9,9-dioctylfluorene)],P3 HT obviously improves the performance of NIR QLEDs.As electroluminescent synaptic devices,these NIR QLEDs exhibit important synaptic functionalities such as short-and long-term plasticity,and may be employed for image recognition.展开更多
Effect of the device fabrication conditions on photovoltaic performance of the polymer solar cells based on poly（3-hexylthiophene） （P3HT） as donor and indene-C70 bisadduct （IC70BA） as acceptor was studied system...Effect of the device fabrication conditions on photovoltaic performance of the polymer solar cells based on poly（3-hexylthiophene） （P3HT） as donor and indene-C70 bisadduct （IC70BA） as acceptor was studied systematically. The device fabrication conditions we studied include pre-thermal annealing temperature, active layer thickness, and the P3HT ： IC70BA weight ratios. For devices with a 188-nm-thick active layer of P3HT ： ICToBA （1 ： 1, w ＇ w） blend film and pre-thermal annealing at 150 ℃C for 10 rain, maximum power conversion efficiency （PCE） reached 5.82% with Voc of 0.81 V, Isc of 11.37 mA/cm2, and FF of 64.0% under the illumination of AM1.5G, 100 mW/cm2.展开更多
Oriented thin films of P3HT were obtained by a friction-transfer technique. The morphology and structure of the film were studied by means of optical microscopy, atomic force microscopy and transmission electron micro...Oriented thin films of P3HT were obtained by a friction-transfer technique. The morphology and structure of the film were studied by means of optical microscopy, atomic force microscopy and transmission electron microscopy. Optical microscopy observation indicates that large size well-ordered P3HT thin films can be produced by a friction-transfer technique. Highly ordered lamellae were observed in P3HT friction-transferred films by electron microscopy. Electron diffraction results confirm the existence of high orientation with the a- and c-axes of P3HT crystals aligned in the film plane while the c-axis parallel to the friction-transfer direction. The atomic force microscopy observation of the as-prepared P3HT thin film shows, however, a featureless top surface morphology, indicating the structure inhomogeneity of the obtained film. To get highly oriented P3HT thin films with homogenous structure, high temperature annealing, solvent vapor annealing and self-seeding recrystallization of the friction-transferred film were performed. It is confirmed that solvent vapor annealing and self-seeding recrystallization methods are efficient in improving the surface morphology and structure of the friction- transferred P3HT thin film. Highly oriented P3HT films with unique structure can be obtained through friction-transfer with subsequent solvent vapor annealing and self-seeding recrystallization.展开更多
基金supported by the National Natural Science Foundation of China (90922028)the National High-Tech Research and Development Program of China (2009AA03Z217)
文摘Using blend heterojunction consisting of C60 derivatives [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and poly(3-hexylthiophene) (P3HT) as charge carrier transferring medium to replace I3–/I– redox electrolyte,a novel flexible dye-sensitized solar cell (DSSC) is fabricated.The characterization of infrared spectra and ultraviolet-visible spectra shows that the PCBM/P3HT heterojunction has not only the absorption in ultraviolet light for PCBM,but also the absorption in visible and near infrared light for P3HT,which widens the photoelectric response range for DSSC.The influence of PCBM/P3HT mass ratio on the performance of the solar cell is discussed.Under 100 mW cm–2 (AM 1.5) simulated solar irradiation,the flexible solar cell achieves a lightto-electric energy conversion efficiency of 1.43%,open circuit voltage of 0.87 V,short circuit current density of 3.0 mA cm–2 and fill factor of 0.54.
文摘This work explores the use of poly（3- hexylthiophene） （P3HT） modified carbon nanotubes （CNTs@P3HT） for the cathodes of hole transporter free, mesoscopic perovskite （CH3NH3PbI3） solar cells （PSCs）, simultaneously achieving high-performance, high stability and low-cost PSCs. Here the thin P3HT modifier acts as an electron blocker to inhibit electron transfer into CNTs and a hydrophobic polymer binder to tightly cross-link the CNTs together to compact the carbon electrode film and greatly stabilize the solar cell. On the other hand, the presence of CNTs greatly improve the conductivity of P3HT. By optimizing the concentration of the P3HT modifier （2 mg/mL）, we have improved the power conversion efficiencies （PCEs） of CNTs@P3HT based PSCs up to 13.43% with an average efficiency of 12.54%, which is much higher than the pure CNTs based PSCs （best PCE 10.59%） and the sandwich-type P3HT/CNTs based PSCs （best PCE 9.50%）. In addition, the hysteresis of the CNTs@P3HT based PSCs is remarkably reduced due to the intimate interface between the perovskite and CNTs@P3HT electrodes. Degradation of the CNTs@ P3HT based PSCs is also strongly retarded as compared to cells employing the pure CNTs electrode when exposed to the ambient condition of 20%- 40% humidity.
基金supported by the National Natural Science Foundation of China(Nos. 21875216, 21734008, 21474088, 51473142, 51561145001, 51620105006, 61721005)Zhejiang Province Science and Technology Plan(No.2018C01047)Research Grant Council of Hong Kong(General Research Fund No. 14314216, CUHK Direct Grant No. 4053227)
文摘Poly(3-hexylthiophene)(P3HT) is a low-cost polymer donor for organic solar cells (OSCs). However, the P3HT-based OSCs usually give low power conversion efficiencies (PCEs) due to the wide bandgap and the high-lying energy levels of P3HT. To solve this problem, in this work, we design and synthesize a new A-D-A type non-fullerene acceptor, DFPCBR, which owns an electron-donating (D) core constructed by linking a 2,5-difluorobenzene ring with two cyclopentadithiophene moieties, and two electron-accepting (A) end-groups of benzo[c][1,2,5]thiadiazole connected with 3-ethyl-2-thioxothiazolidin-4-one. Because of the strong electron-donating ability and large conjugation effect of D core, DFPCBR shows appropriate energy levels and a narrow bandgap matching well with those of P3HT. Therefore, with P3HT as the donor and DFPCBR as the acceptor, the OSCs possess broad absorption range from 350 nm to 780 nm and the reduced energy loss (Eloss) of 0.79 eV (compared with ~1.40 eV for the P3HT:PC61BM device), providing a good PCE of 5.34% with a high open-circuit voltage (VOC) of 0.80 V. Besides, we observe that the photovoltaic performances of these devices are insensitive to the thickness of the active layers:even if the active layer is as thick as 320 nm,~80%of the best PCE is maintained, which is rarely reported for fullerene-free P3HT-based OSCs, suggesting that DFPCBR has the potential application in commercial OSCs in the future.
基金National Key Research and Development Program of China,Grant/Award Number:2019YFE0116700Basic and Applied Basic Research Major Program of Guangdong Province,Grant/Award Number:2019B030302007National Natural Science Foundation of China,Grant/Award Numbers:21835006,91633301,22075017。
文摘At present,most of state-of-the-art power conversion efficiencies(PCEs)of organic solar cells(OSCs)are achieved from the photoactive materials involving donor–acceptor(D–A)copolymer donors.It is well known that the complicated molecular structure of D–A copolymers means the tedious synthesis,which brings about severe cost issue and poor scalability for the industrial production.Therefore,to develop application-oriented OSCs,considerable attention should be paid on simplifying the chemical structures of polymer donors.Polythiophene(PT)and poly(thiophene vinylene)(PTV)derivatives should be among the simplest polymer donors,and OSCs based on them have made some breakthroughs in past 2 years.Here,we briefly introduce the recent advances of OSCs based on low-cost polymers including poly(3-hexylthiophene)(P3HT),PT derivatives,and PTV derivatives,respectively,and emphasize the importance of modulating energy levels,preaggregation effect,and D/A miscibility for the past progress as well as the future development.At last,we also propose some challenges demanding prompt solution for realizing practical application of OSCs,aiming at providing guidance and stimulating new ideas for further research.
基金the International Cooperation Fund of the Science and Technology Commission of Shanghai Municipality(No.20520741500)the Fundamental Research Funds for the Central Universities(No.2232020D-01)+2 种基金Shanghai Rising-Star Program(No.18QA1405000),the Innovation Program of Shanghai Municipal Education Commission(No.2017-01-07-00-03-E00055)the Science and Technology Commission of Shanghai Municipality(No.20JC1414900)the Open Research Fund of State Key Laboratory of Polymer Physics and Chemistry,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences(No.2020-16).
文摘Poly(3-hexylthiophene)(P3HT)thin films,obtained by normal spin-coating and solvent vapor assisted spin-coating(SVASP)before and after thermal annealing(TA),and the corresponding devices were prepared to unravel the microstructure-property relationship,which is of great importance for the development of organic electronics.When SVASP-TA films were used as the active layers of the organic field-effect transistors,a hole mobility up to 0.38 cm^(2)·V^(-1)·s^(-1)was achieved.This mobility was one of the highest values and one order of magnitude higher than that of the normal spin-coating films based transistors.The relationship between the microstructure and the device performance was fully investigated by UV-Vis absorption spectra,grazing incident X-ray diffraction(GIXD),and atomic force microscopy(AFM).The impressive mobility was attributed to the high crystallinity and ordered molecule packing,which stem from the synergistic effects of SVASP and thermal annealing.
基金mainly supported by the National Key Research and Development Program of China(2017YFA0205700)the National Natural Science Foundation of China(NSFC,61774133 and 6147409)Partial support from the NSFC for Innovative Research Groups(61721005)
文摘The quantum-dot light-emitting diodes(QLEDs)that emit near-infrared(NIR)light may be important optoelectronic synaptic devices for the realization of artificial neural networks with complete optoelectronic integration.To improve the performance of NIR QLEDs,we take advantage of their low-energy light emission to explore the use of poly(3-hexylthiophene)(P3 HT)as the hole transport layer(HTL).P3 HT has one of the highest hole mobilities among organic semiconductors and essentially does not absorb NIR light.The usage of P3 HT as the HTL indeed significantly mitigates the imbalance of carrier injection in NIR QLEDs.With the additional incorporation of an interlayer of poly[9,9-bis(3’-(N,N-dimethylamino)propyl)-2,7-flourene]-alt-2,7-(9,9-dioctylfluorene)],P3 HT obviously improves the performance of NIR QLEDs.As electroluminescent synaptic devices,these NIR QLEDs exhibit important synaptic functionalities such as short-and long-term plasticity,and may be employed for image recognition.
基金This work was supported by the National Natural Science Foundation of China （Nos. 20821120293 and 50933003） and Chinese Academy of Sciences.
文摘Effect of the device fabrication conditions on photovoltaic performance of the polymer solar cells based on poly（3-hexylthiophene） （P3HT） as donor and indene-C70 bisadduct （IC70BA） as acceptor was studied systematically. The device fabrication conditions we studied include pre-thermal annealing temperature, active layer thickness, and the P3HT ： IC70BA weight ratios. For devices with a 188-nm-thick active layer of P3HT ： ICToBA （1 ： 1, w ＇ w） blend film and pre-thermal annealing at 150 ℃C for 10 rain, maximum power conversion efficiency （PCE） reached 5.82% with Voc of 0.81 V, Isc of 11.37 mA/cm2, and FF of 64.0% under the illumination of AM1.5G, 100 mW/cm2.
基金financially supported by the National Natural Science Foundation of China(Nos.51221002 and 21434002)
文摘Oriented thin films of P3HT were obtained by a friction-transfer technique. The morphology and structure of the film were studied by means of optical microscopy, atomic force microscopy and transmission electron microscopy. Optical microscopy observation indicates that large size well-ordered P3HT thin films can be produced by a friction-transfer technique. Highly ordered lamellae were observed in P3HT friction-transferred films by electron microscopy. Electron diffraction results confirm the existence of high orientation with the a- and c-axes of P3HT crystals aligned in the film plane while the c-axis parallel to the friction-transfer direction. The atomic force microscopy observation of the as-prepared P3HT thin film shows, however, a featureless top surface morphology, indicating the structure inhomogeneity of the obtained film. To get highly oriented P3HT thin films with homogenous structure, high temperature annealing, solvent vapor annealing and self-seeding recrystallization of the friction-transferred film were performed. It is confirmed that solvent vapor annealing and self-seeding recrystallization methods are efficient in improving the surface morphology and structure of the friction- transferred P3HT thin film. Highly oriented P3HT films with unique structure can be obtained through friction-transfer with subsequent solvent vapor annealing and self-seeding recrystallization.
