摘要
Poly(3-hexylthiophene)(P3HT)thin films,obtained by normal spin-coating and solvent vapor assisted spin-coating(SVASP)before and after thermal annealing(TA),and the corresponding devices were prepared to unravel the microstructure-property relationship,which is of great importance for the development of organic electronics.When SVASP-TA films were used as the active layers of the organic field-effect transistors,a hole mobility up to 0.38 cm^(2)·V^(-1)·s^(-1)was achieved.This mobility was one of the highest values and one order of magnitude higher than that of the normal spin-coating films based transistors.The relationship between the microstructure and the device performance was fully investigated by UV-Vis absorption spectra,grazing incident X-ray diffraction(GIXD),and atomic force microscopy(AFM).The impressive mobility was attributed to the high crystallinity and ordered molecule packing,which stem from the synergistic effects of SVASP and thermal annealing.
基金
the International Cooperation Fund of the Science and Technology Commission of Shanghai Municipality(No.20520741500)
the Fundamental Research Funds for the Central Universities(No.2232020D-01)
Shanghai Rising-Star Program(No.18QA1405000),the Innovation Program of Shanghai Municipal Education Commission(No.2017-01-07-00-03-E00055)
the Science and Technology Commission of Shanghai Municipality(No.20JC1414900)
the Open Research Fund of State Key Laboratory of Polymer Physics and Chemistry,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences(No.2020-16).
