期刊文献+

Effect of Device Fabrication Conditions on Photovoltaic Performance of Polymer Solar Cells Based on Poly(3-hexylthiophene) and Indene-CT0 Bisadduct 被引量:1

Effect of Device Fabrication Conditions on Photovoltaic Performance of Polymer Solar Cells Based on Poly(3-hexylthiophene) and Indene-CT0 Bisadduct
原文传递
导出
摘要 Effect of the device fabrication conditions on photovoltaic performance of the polymer solar cells based on poly(3-hexylthiophene) (P3HT) as donor and indene-C70 bisadduct (IC70BA) as acceptor was studied systematically. The device fabrication conditions we studied include pre-thermal annealing temperature, active layer thickness, and the P3HT : IC70BA weight ratios. For devices with a 188-nm-thick active layer of P3HT : ICToBA (1 : 1, w ' w) blend film and pre-thermal annealing at 150 ℃C for 10 rain, maximum power conversion efficiency (PCE) reached 5.82% with Voc of 0.81 V, Isc of 11.37 mA/cm2, and FF of 64.0% under the illumination of AM1.5G, 100 mW/cm2. Effect of the device fabrication conditions on photovoltaic performance of the polymer solar cells based on poly(3-hexylthiophene) (P3HT) as donor and indene-C70 bisadduct (IC70BA) as acceptor was studied systematically. The device fabrication conditions we studied include pre-thermal annealing temperature, active layer thickness, and the P3HT : IC70BA weight ratios. For devices with a 188-nm-thick active layer of P3HT : ICToBA (1 : 1, w ' w) blend film and pre-thermal annealing at 150 ℃C for 10 rain, maximum power conversion efficiency (PCE) reached 5.82% with Voc of 0.81 V, Isc of 11.37 mA/cm2, and FF of 64.0% under the illumination of AM1.5G, 100 mW/cm2.
出处 《Chinese Journal of Chemistry》 SCIE CAS CSCD 2012年第1期19-22,共4页 中国化学(英文版)
基金 This work was supported by the National Natural Science Foundation of China (Nos. 20821120293 and 50933003) and Chinese Academy of Sciences.
关键词 Keywords polymer solar cells indene-C70 bisadduct poly(3-hexylthiophene) (P3HT) device fabrication condi-tions Keywords polymer solar cells, indene-C70 bisadduct, poly(3-hexylthiophene) (P3HT), device fabrication condi-tions
  • 引文网络
  • 相关文献

参考文献21

  • 1Yu, G.; Gao, J.; Hummelen, J. C.; Wudl, F.; Heeger, A. J. Science 1995, 270, 1789. 被引量:1
  • 2Chen, H.-Y.; Hou, J. H.; Zhang, S. Q.; Liang, Y. Y.; Yang, G. W.; Yang, Y.; Yu, L. P.; Wu, Y.; Li, G. Nature Photonics 2009, 3,649. 被引量:1
  • 3Liang, Y. Y.; Xu, Z.; Xia, J. B.; Tsai, S.-T.; Wu, Y.; Li, G.; Ray, C.; Yu, L. P. Adv. Mater. 2010, 22, E135. 被引量:1
  • 4Chen, J. W.; Cao, Y. Acc. Chem. Res. 2009, 42, 1709. 被引量:1
  • 5Li, Y. F.; Zou, Y. P. Adv. Mater 2008, 20, 2952. 被引量:1
  • 6Dennler, G.; Scharber, M. C.; Brabec, C. J. Adv. Mater. 2009, 21, 1323. 被引量:1
  • 7Chen, Y.-J.; Yang, S.-H.; Hsu, C.-S. Chem. Rev. 2009, 109, 5868. 被引量:1
  • 8Ma, W. L.; Yang, C. Y.; Gong, X.; Lee, K. H.; Heeger, A. J. Adv Funct. Maten 2005, 15, 1617. 被引量:1
  • 9Li, G.; Shrotriya, V.; Huang, J. S.; Yao, Y.; Moriarty, T.; Emery, K. Yang, Y. Nat. Mater 2005, 4, 864. 被引量:1
  • 10Zhao, Y.; Xie, Z. Y.; Qu, Y.; Geng, Y. H.; Wang, L. X. Appl. Phys Lett. 2007, 90, 043504. 被引量:1

引证文献1

二级引证文献1

;
使用帮助 返回顶部