A GaAs MESFET three-terminal varactor diode fabricated on a semi-insulating substrate can be used for the MMIC active voltage-controlled filter because it is compatible with the standard GaAs MMIC process. The high ca...A GaAs MESFET three-terminal varactor diode fabricated on a semi-insulating substrate can be used for the MMIC active voltage-controlled filter because it is compatible with the standard GaAs MMIC process. The high capacitance ratio needed for wideband tuning filter requires the three-terminal varactor diode (TTVD) to be biased up pinch-off voltage or positive bias. Therefore a variable-capacitance model is applied to analyzing C-V characteristics of this TTVD. The earlier capacitance model for GaAs MESFET did not consider the free carrier move in active region which can cause varying the C-V characteristic, but only depletion layer model approximation. The new model described here takes into account the free carrier move for contributing to gate capacitance. The model analytical results agree well with experiment.展开更多
A high- Tc superconducting (HTSC) thin film/GaAs MESFET hybrid microwave oscillator operated at 10 6 GHz has been designed, fabricated and characterized. Microstrip line structures were used throughout the circuit wit...A high- Tc superconducting (HTSC) thin film/GaAs MESFET hybrid microwave oscillator operated at 10 6 GHz has been designed, fabricated and characterized. Microstrip line structures were used throughout the circuit with superconducting thin film YBaiCuiO7 8(YBCO) as the conductor material. The YBCO thin films were deposited on 15 mm×10 mm×0. 5 mm LaAlO3 substrates. The oscillator was common-source, series feedback type using a GaAs-MESFET (NE72084) as the active device and a superconducting microstrip resonator as the frequency stabilizing element. By improving the unloaded quality factor Q0 of the superconducting microstrip resonator and adjusting the coupling coefficient between the resonator and the gate of the MESFET, the phase noise of the oscillator was decreased At 77 K, the phase noise of the oscillator at 10 kHz offset from carrier was - 87 dBc/Hz.展开更多
The aim of this article is to investigate the effect of dielectric loss tangent on frequency dispersion of output reactance and capacitance in GaAs MESFETs.For this purpose,measurements of output impedance modulus and...The aim of this article is to investigate the effect of dielectric loss tangent on frequency dispersion of output reactance and capacitance in GaAs MESFETs.For this purpose,measurements of output impedance modulus and phase have been carried out within a frequency range of 10 Hz to 10 kHz,and various voltage values of gatesource（Vgs= 0,-0.2,-0.3,-0.35,-0.4,-0.45,-0.5 and-0.6 V） and drain-source（Vds= 0.7,0.9,1,1.5and 2 V） Based on the concept of complex permittivity of semiconductor material,complex capacitance is used to analyze and simulate frequency dispersion of output reactance and capacitance of GaAs MESFETs.The results show that conductor losses which dominate the dielectric loss tangent are attributed to trapping mechanisms at the interface of devices;so they influence the frequency dispersion of output reactance and capacitance in particular at low frequencies.This reveals that frequency dispersion of these parameters is also related to dielectric loss tangent of semiconductor materials which affects the response of electronic devices according to frequency variation.展开更多
文摘A GaAs MESFET three-terminal varactor diode fabricated on a semi-insulating substrate can be used for the MMIC active voltage-controlled filter because it is compatible with the standard GaAs MMIC process. The high capacitance ratio needed for wideband tuning filter requires the three-terminal varactor diode (TTVD) to be biased up pinch-off voltage or positive bias. Therefore a variable-capacitance model is applied to analyzing C-V characteristics of this TTVD. The earlier capacitance model for GaAs MESFET did not consider the free carrier move in active region which can cause varying the C-V characteristic, but only depletion layer model approximation. The new model described here takes into account the free carrier move for contributing to gate capacitance. The model analytical results agree well with experiment.
基金Project supported by the National Center for Research and Development on Superconductivity of China.
文摘A high- Tc superconducting (HTSC) thin film/GaAs MESFET hybrid microwave oscillator operated at 10 6 GHz has been designed, fabricated and characterized. Microstrip line structures were used throughout the circuit with superconducting thin film YBaiCuiO7 8(YBCO) as the conductor material. The YBCO thin films were deposited on 15 mm×10 mm×0. 5 mm LaAlO3 substrates. The oscillator was common-source, series feedback type using a GaAs-MESFET (NE72084) as the active device and a superconducting microstrip resonator as the frequency stabilizing element. By improving the unloaded quality factor Q0 of the superconducting microstrip resonator and adjusting the coupling coefficient between the resonator and the gate of the MESFET, the phase noise of the oscillator was decreased At 77 K, the phase noise of the oscillator at 10 kHz offset from carrier was - 87 dBc/Hz.
文摘The aim of this article is to investigate the effect of dielectric loss tangent on frequency dispersion of output reactance and capacitance in GaAs MESFETs.For this purpose,measurements of output impedance modulus and phase have been carried out within a frequency range of 10 Hz to 10 kHz,and various voltage values of gatesource（Vgs= 0,-0.2,-0.3,-0.35,-0.4,-0.45,-0.5 and-0.6 V） and drain-source（Vds= 0.7,0.9,1,1.5and 2 V） Based on the concept of complex permittivity of semiconductor material,complex capacitance is used to analyze and simulate frequency dispersion of output reactance and capacitance of GaAs MESFETs.The results show that conductor losses which dominate the dielectric loss tangent are attributed to trapping mechanisms at the interface of devices;so they influence the frequency dispersion of output reactance and capacitance in particular at low frequencies.This reveals that frequency dispersion of these parameters is also related to dielectric loss tangent of semiconductor materials which affects the response of electronic devices according to frequency variation.
