摘要
文章详细分析并讨论了应用于相位体制DRFM的ADC参数表征及测试方法。提出用相位非线性(PDNL和PINL)来描述相位体制ADC的静态性能,用瞬时工作带宽(IBW)及相位精度随频率的变化来描述相位ADC的频域性能。采用上述方法对利用南京电子器件研究所标准3"GaAsMESFET全离子注入工艺流片得到的3bit相位体制ADC进行了性能表征及测试,结果表明其静态PDNL≤0.01LSB,PDNL≤±0.007LSB;电路可在2GHz时钟下完成采样、量化,达到2Gbps的转换速率,其瞬时带宽可达250MHz,带内相位精度小于±0.45LSB。
This paper detailedly describes the characterization and test method of phase digitizing ADC for 3bit phase digital radio frequency memory (DRFM). Phase nonlinear parameters (PDNL, PINL) are used to describe the static performance. Instantaneous bandwidth (IBW) and phase accuracy depending on the frequency can be used to describe the dynamic performance. All the above methods have been utilized to describe the performance of a GaAs 3bit phase ADC fabricated by Nanjing Electronic Devices Institute's GaAs Φ76mm standard full ion-implanted process and 0.5um non-self-aligned D-mode MESFETs. Test results indicate ,and that the ADC can operate at 2GHz sampling rate with 2Gbps conversion rate and its instantaneous bandwidth (IBW) is greater than 250MHz.
出处
《微电子学与计算机》
CSCD
北大核心
2005年第2期22-24,28,共4页
Microelectronics & Computer
