摘要
用α台阶仪和原子力显微镜(AFM)研究了不同体积比的柠檬酸(50%)/双氧水溶液对GaAs/AlxGa1-xAs系统的选择湿法腐蚀特性,对AlxGa1-xAs停止层的组分和腐蚀液体积比进行了优化.当腐蚀液体积比在1.5∶1到2∶1范围时获得了最好的选择腐蚀效果.在25℃.温度条件下,当腐蚀液体积比为1.5∶1时,对Al摩尔分数x为0.2、0.3和1的GaAs/AlxGa1-xAs系统腐蚀比分别为45、74和大于200,表面腐蚀形貌均匀平整.将这种选择腐蚀技术用于GaAsMISFET的栅槽工艺,获得了良好的阈值电压均匀性.
We have investigated the selective wet etching characteristics of GaAs/AlxGa1-xAs system in 50% citric acid /30% H2O2 solution with various volume ratios by ɑ profilometer and atom force microscopy(AFM).The composition of AlxGa1-xAs etch stop layer and the volume ratio of the citric acid/H2O2 solution were optimized.The best result was obtained-by using of the solution with citric acid /H2O2 volumetric ratio in the range from 1.5∶1 to 2∶1.The etch selectivities of GaAs/AlxGa1-xAs are 45 for x=0.2,74 for x=0...
出处
《电子器件》
CAS
2007年第2期384-386,390,共4页
Chinese Journal of Electron Devices
基金
河北省自然科学基金资助项目(F2004000078)
