The restabilizing mechanisms after the onset of thermal instability in bipolar transistors are studied by theoretical analyses,computer simulations and experimental measurements.Restability conditions are described by...The restabilizing mechanisms after the onset of thermal instability in bipolar transistors are studied by theoretical analyses,computer simulations and experimental measurements.Restability conditions are described by novel analytical formulae.Furthermore,the expression of collect current in the second fly-back point is given for the first time.The effects of emitter ballast resistance,collector-emitter voltage and thermal resistance on restabilization mechanisms are expressed and investigated.展开更多
基金by the National Natural Science Foundation of China under Grant Nos 60776051,61006059 and 61006044the Beijing Municipal Natural Science Foundation under Grant No 4082007+2 种基金the Scientific Research Common Program of Beijing Municipal Commission of Education under Grant Nos KM200710005015 and KM200910005001the Ninth Technology Fund of BJUT(ykj-2011-5104 and ykj-2011-5107)the Funding Project for Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality.
文摘The restabilizing mechanisms after the onset of thermal instability in bipolar transistors are studied by theoretical analyses,computer simulations and experimental measurements.Restability conditions are described by novel analytical formulae.Furthermore,the expression of collect current in the second fly-back point is given for the first time.The effects of emitter ballast resistance,collector-emitter voltage and thermal resistance on restabilization mechanisms are expressed and investigated.
