摘要
为进一步提高晶硅太阳能电池发射极的性能,本文提出了一种新的发射极制备技术-低温CVD法沉积固态薄膜扩散源并进行高温扩散。采用热丝化学气相沉积法(HWCVD)在单晶硅片上沉积重掺杂硅基薄膜作为固态扩散源,然后在空气氛围下的管式炉中进行高温扩散,最后用稀HF溶液去除表面的BSG/PSG。通过掺磷薄膜扩散在P型单晶硅片上制备了方阻在50~250Ω/□范围内可控的n+型发射极;通过掺硼薄膜扩散在N型硅片上制备了方阻在150~600Ω/□范围内可控的p+型发射极。并且通过在源气体中加入CO2作为氧源,实现了扩散后硅片表面残留扩散源层的彻底去除。
A novel solid-phase diffusion method is mentioned in this paper to make the emitters of the crystalline silicon solar cells.The solid diffusion source films are heavily doped amorphous silicon-based films deposited by Hot Wire Chemical-vapor Deposition（HWCVD） at low substrate temperature.The films are doped by B2H6 for p-type and PH3 for n-type.After the films deposition,the wafers are thermaltreated in a tube furnace at air atmosphere.The Borosilicate glass（BSG） and Phosphorus silicon glass（PSG） are removed by diluted HF solution.With phosphorous source diffusion,the sheet resistance of n^＋emitter in the range of 50-250 Ω/□ is achieved on p-type monocrystalline silicon wafer.The sheet resistance of p^＋emitter in the range of 150-600 Ω/□ is achieved on n-type monocrystalline silicon.CO2 as oxygen source added to the precursor gases during the deposition process by HWCVD is succeeded to thoroughly remove the source layer after diffusion.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2016年第11期2591-2595,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(61306084
61464007)
江苏省能量转换材料与技术重点实验室开放课题基金(NJ20160032)
江西省重点研发计划-技术引进与合作研究-重点项目(2016BBH80043)
关键词
HWCVD
晶硅太阳电池
固态扩散源
发射极
方阻
HWCVD
crystalline silicon solar cell
solid diffusion source
emitter
sheet resistance
