摘要
研究了激光掺杂选择性发射极太阳电池工艺中不同激光功率对磷原子掺杂浓度、硅片表面损伤程度的影响及发射极方阻与电池串联电阻随激光功率的变化情况。通过对磷原子浓度分布曲线的观察,阐明了磷原子浓度对选择性发射极电池性能的影响机理;通过对比不同激光功率掺杂条件下选择性发射极电池特性的变化,发现激光功率在40-50 W时电池的串联电阻达到最低,且串联电阻值随激光功率的增强而升高。通过实验确定了最优激光掺杂功率,并对生产线各工序参数进行整体优化,实现了使电池产业化效率稳定提升0.25%以上的激光掺杂选择性发射极太阳电池制备工艺。
The influences of the different laser powers on the phosphorus doping concentration and damage of the silicon wafer surface in the laser doped selective emitter solar cell process were studied,and the variations of the emitter sheet resistance and series resistance of the solar cell with the laser power were also studied.The effect mechanism of the phosphorus concentration on the selective emitter solar cell performance was elaborated by observing the phosphorus concentration profile.By comparing the changes of the selective emitter solar cell performance under different laser power doping conditions,it is found that the series resistance of the selective emitter solar cell reaches the minimum at the laser power of 40-50 W,and the series resistance increases with the increase of the laser power.The optimal laser doping power was determined by the experiment,the process parameters of the production line were all optimized,the preparation technology of the laser doped selective emitter solar cell was realized,which can steadily improve the average final efficiency of selective emitter solar cells by more than 0.25%.
出处
《微纳电子技术》
北大核心
2016年第1期43-47,共5页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(61006050)
国家高技术研究发展计划(863计划)资助项目(2011AA050507)
北京市自然科学基金资助项目(2151004)
中央高校基本科研业务费专项资金资助项目(13ZD05)
