到目前为止,根据使用领域,Flash(闪存)、SRAM和 DRAM 第一选择主要用于便携设备。但新技术挤进市场。铁电随机存取存储器(FRAM)(Ferroelec-tric Random Access Memory),一种非易失性存储器,消耗能量少,写入/读出次数无限,没有备用电池...到目前为止,根据使用领域,Flash(闪存)、SRAM和 DRAM 第一选择主要用于便携设备。但新技术挤进市场。铁电随机存取存储器(FRAM)(Ferroelec-tric Random Access Memory),一种非易失性存储器,消耗能量少,写入/读出次数无限,没有备用电池仍正常工作,多年存储后也不会消失,并具有高运行速度和高存储容量的特点。与借助电容以电荷形式存储数据的一般存储器芯片相反,FRAM展开更多
we have developed ferroelectric capacitor fabrication technique to realize low-voltage and high-density ferroelectric random access memory （FRAM）. High temperature deposited IrOxtop electrode reveals high crystallin...we have developed ferroelectric capacitor fabrication technique to realize low-voltage and high-density ferroelectric random access memory （FRAM）. High temperature deposited IrOxtop electrode reveals high crystalline quality which drastically reduces the degradation of ferroelectric film by preventing hydrogen diffusion into ferroelectric film. This improvement enables us to commercialize highly-reliable 1T 1C FRAM with memory density of 4 Mb or larger.展开更多
文摘到目前为止,根据使用领域,Flash(闪存)、SRAM和 DRAM 第一选择主要用于便携设备。但新技术挤进市场。铁电随机存取存储器(FRAM)(Ferroelec-tric Random Access Memory),一种非易失性存储器,消耗能量少,写入/读出次数无限,没有备用电池仍正常工作,多年存储后也不会消失,并具有高运行速度和高存储容量的特点。与借助电容以电荷形式存储数据的一般存储器芯片相反,FRAM
文摘we have developed ferroelectric capacitor fabrication technique to realize low-voltage and high-density ferroelectric random access memory （FRAM）. High temperature deposited IrOxtop electrode reveals high crystalline quality which drastically reduces the degradation of ferroelectric film by preventing hydrogen diffusion into ferroelectric film. This improvement enables us to commercialize highly-reliable 1T 1C FRAM with memory density of 4 Mb or larger.
