摘要
铁电材料具有自发极化并可由外电场反转，因此可以构成一种不挥发存储器．铁电薄膜与半导体集成，产生铁电随机存储器，并将成为存储器技术的主体．
Ferroelectric materials show a spontaneous electrical polarization that can be reversed by as applied external electric field. It should be feasible to build a ferroelectric nonvolatile memory. The mergence of ferroelectric thin film with silicon creates a new ferroelectric random access memory (FeRAM). FeRAM technology will become the dominate nonvolative memory technology in fUture.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第1期19-22,共4页
Journal of Inorganic Materials
关键词
铁电薄膜
铁电随机存储器
存储器
不挥发存储器
ferrocelectric thin film
ferroelectric random access memory (FeRAM), nonvolatile ferroelectricmemory
