Y2002-63302-144 0304962采用扩展电阻探针测量的金属感应横向晶体化区域的电特性=Direct electrical characterization of metal-in-duced-lateral-crystallization regions by spreading resis-tance probe measurements[会,英]/Leung...Y2002-63302-144 0304962采用扩展电阻探针测量的金属感应横向晶体化区域的电特性=Direct electrical characterization of metal-in-duced-lateral-crystallization regions by spreading resis-tance probe measurements[会,英]/Leung,T.C.&Cheng,C.F.//2001 IEEE Hong Kong Electron DevicesMeeting.—144～147(E)展开更多
A silicon temperature sensor with a conventional resistor structure is fabricated on thin-film silicon-on-insulator (SOI) substrate.The sensor has very promising characteristics.The maximum operating temperature ca...A silicon temperature sensor with a conventional resistor structure is fabricated on thin-film silicon-on-insulator (SOI) substrate.The sensor has very promising characteristics.The maximum operating temperature can reach 550℃ even at a low current of 0.1mA.Experimental results support that the minority-carrier exclusion effect can be strong in the conventional resistor structure when the silicon film is sufficiently thin,thus significantly raising the maximum operating temperature.Moreover,since the structure of the device on thin-film SOI wafer is not crucial in controlling the maximum operating temperature,device layout can be varied according to the requirements of applications.展开更多
1、引言在半导体发光器件中,Gap 发光器件占的比例越来越大,而 Gap 欧姆接触是当前 Gap 发光二极管(LED)制作中引人注目的问题.Gap 是宽禁带化合物,电阻率较高,表面态密度大,因而给欧姆接触电极的制备造成了很大困难.迄今,人们进行了各...1、引言在半导体发光器件中,Gap 发光器件占的比例越来越大,而 Gap 欧姆接触是当前 Gap 发光二极管(LED)制作中引人注目的问题.Gap 是宽禁带化合物,电阻率较高,表面态密度大,因而给欧姆接触电极的制备造成了很大困难.迄今,人们进行了各种合金作为 Gap 欧姆接触材料的研究工作,结果表明,对不同的接触金属层,在最佳合金温度下可得到较小的比接触电阻.随着Ⅲ—Ⅴ族半导体材料及其检测技术的发展。展开更多
文摘Y2002-63302-144 0304962采用扩展电阻探针测量的金属感应横向晶体化区域的电特性=Direct electrical characterization of metal-in-duced-lateral-crystallization regions by spreading resis-tance probe measurements[会,英]/Leung,T.C.&Cheng,C.F.//2001 IEEE Hong Kong Electron DevicesMeeting.—144～147(E)
文摘A silicon temperature sensor with a conventional resistor structure is fabricated on thin-film silicon-on-insulator (SOI) substrate.The sensor has very promising characteristics.The maximum operating temperature can reach 550℃ even at a low current of 0.1mA.Experimental results support that the minority-carrier exclusion effect can be strong in the conventional resistor structure when the silicon film is sufficiently thin,thus significantly raising the maximum operating temperature.Moreover,since the structure of the device on thin-film SOI wafer is not crucial in controlling the maximum operating temperature,device layout can be varied according to the requirements of applications.
文摘1、引言在半导体发光器件中,Gap 发光器件占的比例越来越大,而 Gap 欧姆接触是当前 Gap 发光二极管(LED)制作中引人注目的问题.Gap 是宽禁带化合物,电阻率较高,表面态密度大,因而给欧姆接触电极的制备造成了很大困难.迄今,人们进行了各种合金作为 Gap 欧姆接触材料的研究工作,结果表明,对不同的接触金属层,在最佳合金温度下可得到较小的比接触电阻.随着Ⅲ—Ⅴ族半导体材料及其检测技术的发展。
