摘要
论述了扩展电阻分布法的基本原理和具体操作方法,该法中两个精确排列的探针,沿着被测晶片的磨制斜面边移动,边测试,得出系列数据。二探针扩展电阻分布法采用平式针尖无凹痕接触模型和多层理论计算扩展电阻。总结了为提高测试准确性,在测试中需要注意的事项。较高的空间分辨率和先进的多层算法,使二探针扩展电阻分布法能够测试多种结构复杂的样品。因此,在IC芯片制造过程中,二探针扩展电阻分布法广泛应用于外延、注入和扩散等工艺,为工程师调试新工艺、优化工艺条件以及进行失效分析等工作,提供电阻率-深度曲线图和载流子浓度-深度曲线图等数据。
The principle and operation method of two-probe spreading resistance technique were discussed. Two tactic probes move along the side of the grinding oblique plane on the wafer, and the measured data was recorded. A non-indenting fiat tip model and a muhilayer theory were used to calculate spreading resistance. Attentions for improving the measure accuracy were summarized. Because of very high spatial resolution and advanced muhilayer algorithms, the method can be used for many kinds of samples with complicated structures. Therefore, the method is widely used in the manufacturing process of IC such as epitaxial process, ion implantation process and diffusion process and so on. Curves of resistivity versus depth, and carrier concentration versus depth are provided to debug new processes, optimize current processes and failure analysis.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第7期684-688,共5页
Semiconductor Technology
关键词
二探针
平式针尖无凹痕模型
多层理论
扩展电阻
two-probe
non-indenting flat tip model
muhilayer theory
spreading resistance
