Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was empl...Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was employed to study the simultaneous effect of frequency and pulse-on time on the current waveforms and the crystallographic orientation,microstructure,and in particular,the deposition rate of titanium nitride at constant time and average power equal to 250 W.The crystallographic structure and morphology of deposited films were analyzed using XRD and FESEM,respectively.It is found that the deposition rate of HiPIMS samples is tremendously dependent on pulse-on time and frequency of pulses where the deposition rate changes from 4.5 to 14.5 nm/min.The regression equations and analyses of variance(ANOVA)reveal that the maximum deposition rate(equal to(17±0.8)nm/min)occurs when the frequency is 537 Hz and pulse-on time is 212μs.The experimental measurement of the deposition rate under this condition gives rise to the deposition rate of 16.7 nm/min that is in good agreement with the predicted value.展开更多
采用磁控溅射技术在硅衬底上制备ZnS薄膜,探究了溅射功率对ZnS薄膜沉积速率、表面粗糙度和表面形貌的影响。采用台阶仪、原子力显微镜(Atomic Force Microscope,AFM)、扫描电子显微镜(Scanning Electron Microscope,SEM)、椭偏仪等表征...采用磁控溅射技术在硅衬底上制备ZnS薄膜,探究了溅射功率对ZnS薄膜沉积速率、表面粗糙度和表面形貌的影响。采用台阶仪、原子力显微镜(Atomic Force Microscope,AFM)、扫描电子显微镜(Scanning Electron Microscope,SEM)、椭偏仪等表征薄膜的表面形貌、微观结构和光学性能。结果表明,ZnS薄膜的沉积速率与溅射功率有关,随溅射功率的增加而线性增加;表面粗糙度与溅射功率相关,随溅射功率的增大呈现先增大后减小的趋势。在微观结构方面,薄膜晶粒尺寸也呈现先变大后减小的趋势。随着溅射功率的增大,ZnS膜层的折射率先减小后增大。因此,溅射功率对膜层生长具有重要的作用。展开更多
文摘Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was employed to study the simultaneous effect of frequency and pulse-on time on the current waveforms and the crystallographic orientation,microstructure,and in particular,the deposition rate of titanium nitride at constant time and average power equal to 250 W.The crystallographic structure and morphology of deposited films were analyzed using XRD and FESEM,respectively.It is found that the deposition rate of HiPIMS samples is tremendously dependent on pulse-on time and frequency of pulses where the deposition rate changes from 4.5 to 14.5 nm/min.The regression equations and analyses of variance(ANOVA)reveal that the maximum deposition rate(equal to(17±0.8)nm/min)occurs when the frequency is 537 Hz and pulse-on time is 212μs.The experimental measurement of the deposition rate under this condition gives rise to the deposition rate of 16.7 nm/min that is in good agreement with the predicted value.
文摘采用磁控溅射技术在硅衬底上制备ZnS薄膜,探究了溅射功率对ZnS薄膜沉积速率、表面粗糙度和表面形貌的影响。采用台阶仪、原子力显微镜(Atomic Force Microscope,AFM)、扫描电子显微镜(Scanning Electron Microscope,SEM)、椭偏仪等表征薄膜的表面形貌、微观结构和光学性能。结果表明,ZnS薄膜的沉积速率与溅射功率有关,随溅射功率的增加而线性增加;表面粗糙度与溅射功率相关,随溅射功率的增大呈现先增大后减小的趋势。在微观结构方面,薄膜晶粒尺寸也呈现先变大后减小的趋势。随着溅射功率的增大,ZnS膜层的折射率先减小后增大。因此,溅射功率对膜层生长具有重要的作用。
