Lithium–oxygen(Li–O_(2))batteries have great potential for applications in electric devices and vehicles due to their high theoretical energy density of 3500 Wh kg^(-1).Unfortunately,their practical use is seriously...Lithium–oxygen(Li–O_(2))batteries have great potential for applications in electric devices and vehicles due to their high theoretical energy density of 3500 Wh kg^(-1).Unfortunately,their practical use is seriously limited by the sluggish decomposition of insulating Li_(2)O_(2),leading to high OER overpotentials and the decomposition of cathodes and electrolytes.Cathode electrocatalysts with high oxygen reduction reaction(ORR)and oxygen evolution re-action(OER)activities are critical to alleviate high charge overpotentials and promote cycling stability in Li–O_(2)batteries.However,constructing catalysts for high OER performance and energy efficiency is always challenging.In this mini-review,we first outline the employment of advanced electrocatalysts such as carbon materials,noble and non-noble metals,and metal–organic frameworks to improve battery performance.We then detail the ORR and OER mechanisms of photo-assisted electrocatalysts and single-atom catalysts for superior Li–O_(2)battery performance.Finally,we offer perspectives on future development directions for cathode electrocatalysts that will boost the OER kinetics.展开更多
The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of ...The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.展开更多
Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically ...Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically investigated a convenient and effective method,ultraviolet ozone treatment,for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical performance.The resulted hole concentration and mobility are near 100 times enhanced to be〜1.0×10^13 cm^-2 and 101.4 cm^2/(V·s),respectively,and the conductivity is improved by 5 orders of magnitude.These values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room temperature.Compared with the pristine one,the photoresponsivity(522 mA/W)is enhanced approximately 100 times.Such excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx(x<3),as proved by photoemission spectroscopy.Additionally,the p-doped devices exhibit excellent stability in ambient air.Our findings show significant potential in future nanoelectronic and optoelectronic applications.展开更多
The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor （SITH） have been studied numerically and experimentally. The analytical expressions of the...The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor （SITH） have been studied numerically and experimentally. The analytical expressions of the minority carrier distribution in the channel of the SITH were also derived and the space charge distribution control- ling mechanism on the current of the SITH under high level injection have been analyzed deeply. The relationships among the minority carrier distribution, potential distribution, I-V characteristics and transient performances of the SITH are revealed.展开更多
Materials with ultralow thermal conductivity and good thermal stability are of great interest in numerous applications such as energy storage and conversion devices,and thermal insulation components.In this work,a fam...Materials with ultralow thermal conductivity and good thermal stability are of great interest in numerous applications such as energy storage and conversion devices,and thermal insulation components.In this work,a family of high-entropy Sm_(2)B_(2)O_(7)(B=Ti,Zr,Sn,Hf,Y,Yb,Nb,and Ta) oxides with highly disordered cations on the B-site has been synthesized by introducing large atomic-size mismatch,mass and charge disorder.Through tuning the composition,the high-entropy Sm_(2)B_(2)O_(7) oxides can be engineered from pyrochlore to fluorite structure,accompanied with an order-disorder transition.The pyrochlore Sm_(2)(Nb_(0.2)Sn_(0.2)Ti_(0.2)Y_(0.2)Zr_(0.2))_(2)O_(7) and fluorite Sm_(2)(Nb_(0.2)Ta_(0.2)Y_(0.2)Yb_(0.2)Zr_(0.2))_(2)O_(7) exhibit low thermal conductivities of 1.35 W·m^(-1)·K^(-1) and 1.23 W·m^(-1)·K^(-1),respectively,indicating their good thermal insulation.In addition,the high-entropy fluorite Sm_(2)(Nb_(0.2)Ta_(0.2)Y_(0.2)Yb_(0.2)Zr_(0.2))_(2)O_(7) also shows average thermal expansion coefficient of 10.2 × 10^(-6)℃^(-1) and high-temperature stability even after thermal exposure at 1600 °C in air for 30 h.These results indicate that the high-entropy Sm_(2)B_(2)O_(7)(B=Ti,Zr,Sn,Hf,Y,Yb,Nb,and Ta) can be promising candidates for thermal barrier coatings and thermally insulators.展开更多
In order to reveal the conduction mechanism of ZnO varistor, the pulsed electroacoustic (PEA) measurement is employed to investigate the space charge distribution characteristics of ZnO varistors under different curre...In order to reveal the conduction mechanism of ZnO varistor, the pulsed electroacoustic (PEA) measurement is employed to investigate the space charge distribution characteristics of ZnO varistors under different current densities in this paper. Experimental results show that the relationship between the space charge and the current density is consistent with the voltage-current characteristics, and can reflect the nonlinear characteristics of ZnO varistor. The space charge increases linearly with the increase of the electric field strength and the current density in the small current region, this reflects the decrease of the surface states of the grain boundary and changes of the Schottky barrier. There exists a transition region between the small current and middle current regions, where the current is composed of the current by the emission of thermally activated electrons and the tunneling current. In the middle current region, the space charge will decrease as the current increases, and will disappear with the depletion layer decreasing to zero.展开更多
Graphene, a single atomic layer of sp2-hybridized carbon, has immense potential as a transparent conducting material in electronic applications owing to its superior properties, including optical transparency and high...Graphene, a single atomic layer of sp2-hybridized carbon, has immense potential as a transparent conducting material in electronic applications owing to its superior properties, including optical transparency and high conductivity. Particularly, the tunable work function of graphene enables the integration of graphene electrodes with various electronic devices. To achieve high performance in graphene-based devices, effective charge transport between the graphene electrode and the semiconducting material needs to be optimized; this is closely related to the modulation of the Schottky barrier （SB）. In this study, we investigate the ~nable charge transport properties as a function of graphene doping in n-channel thin-film transistors （TFTs） in terms of the electrical characteristics and low-frequency noise （LFN） behaviors. Alkali metal carbonates tuned the work function of graphene, resulting in a dramatic decrease in the SB and an improvement of the carrier injection in n-channel TFTs. The electrical performance of the TFTs was evaluated by extraction of the field-effect mobilities and ratio of contact resistance to total resistance. Furthermore, the level of contact noise created by the barrier height fluctuation and relative contribution of channel noise and contact noise in the TFTs was investigated by LFN measurements to demonstrate the ~nable charge transport. Our findings therefore provide new insights into the tunable charge transport mechanism in graphene-based devices and reveal the immense potential of graphene as electrodes in high performance flexible and transparent displays.展开更多
基金supported by National Science Fund for Distinguished Young Scholars(No.52025133)Tencent Foundation through the XPLORER PRIZE,and the Fund of the State Key Laboratory of Solidification Processing in NWPU(SKLSP202004)China Postdoctoral Science Foundation(No.2021M700211).
文摘Lithium–oxygen(Li–O_(2))batteries have great potential for applications in electric devices and vehicles due to their high theoretical energy density of 3500 Wh kg^(-1).Unfortunately,their practical use is seriously limited by the sluggish decomposition of insulating Li_(2)O_(2),leading to high OER overpotentials and the decomposition of cathodes and electrolytes.Cathode electrocatalysts with high oxygen reduction reaction(ORR)and oxygen evolution re-action(OER)activities are critical to alleviate high charge overpotentials and promote cycling stability in Li–O_(2)batteries.However,constructing catalysts for high OER performance and energy efficiency is always challenging.In this mini-review,we first outline the employment of advanced electrocatalysts such as carbon materials,noble and non-noble metals,and metal–organic frameworks to improve battery performance.We then detail the ORR and OER mechanisms of photo-assisted electrocatalysts and single-atom catalysts for superior Li–O_(2)battery performance.Finally,we offer perspectives on future development directions for cathode electrocatalysts that will boost the OER kinetics.
文摘The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.
基金We acknowledge the financial support from the National Natural Science Foundation of China(Nos.11874427,11874423).Dr.H an H uang acknowledges support from the Innovation-Driven project of Central South University(No.2017CX018)and from the Natural Science Foundation of H unan province(No.2016JJ1021).Mr.Xiaoming Zheng acknowledges the support from the Fundamental Research Funds for the Central Universities of Central South University(No.2017zzts066).
文摘Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically investigated a convenient and effective method,ultraviolet ozone treatment,for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical performance.The resulted hole concentration and mobility are near 100 times enhanced to be〜1.0×10^13 cm^-2 and 101.4 cm^2/(V·s),respectively,and the conductivity is improved by 5 orders of magnitude.These values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room temperature.Compared with the pristine one,the photoresponsivity(522 mA/W)is enhanced approximately 100 times.Such excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx(x<3),as proved by photoemission spectroscopy.Additionally,the p-doped devices exhibit excellent stability in ambient air.Our findings show significant potential in future nanoelectronic and optoelectronic applications.
基金Project supported by the National Natural Science Foundation of China(No.61366006)the Scientific and Technological Supporting Programme of Gansu Province,China(No.1304GKCA012)
文摘The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor （SITH） have been studied numerically and experimentally. The analytical expressions of the minority carrier distribution in the channel of the SITH were also derived and the space charge distribution control- ling mechanism on the current of the SITH under high level injection have been analyzed deeply. The relationships among the minority carrier distribution, potential distribution, I-V characteristics and transient performances of the SITH are revealed.
基金financially supported by the National Natural Science Foundation of China (Nos. 52072294, 51772237)。
文摘Materials with ultralow thermal conductivity and good thermal stability are of great interest in numerous applications such as energy storage and conversion devices,and thermal insulation components.In this work,a family of high-entropy Sm_(2)B_(2)O_(7)(B=Ti,Zr,Sn,Hf,Y,Yb,Nb,and Ta) oxides with highly disordered cations on the B-site has been synthesized by introducing large atomic-size mismatch,mass and charge disorder.Through tuning the composition,the high-entropy Sm_(2)B_(2)O_(7) oxides can be engineered from pyrochlore to fluorite structure,accompanied with an order-disorder transition.The pyrochlore Sm_(2)(Nb_(0.2)Sn_(0.2)Ti_(0.2)Y_(0.2)Zr_(0.2))_(2)O_(7) and fluorite Sm_(2)(Nb_(0.2)Ta_(0.2)Y_(0.2)Yb_(0.2)Zr_(0.2))_(2)O_(7) exhibit low thermal conductivities of 1.35 W·m^(-1)·K^(-1) and 1.23 W·m^(-1)·K^(-1),respectively,indicating their good thermal insulation.In addition,the high-entropy fluorite Sm_(2)(Nb_(0.2)Ta_(0.2)Y_(0.2)Yb_(0.2)Zr_(0.2))_(2)O_(7) also shows average thermal expansion coefficient of 10.2 × 10^(-6)℃^(-1) and high-temperature stability even after thermal exposure at 1600 °C in air for 30 h.These results indicate that the high-entropy Sm_(2)B_(2)O_(7)(B=Ti,Zr,Sn,Hf,Y,Yb,Nb,and Ta) can be promising candidates for thermal barrier coatings and thermally insulators.
基金supported by the National Natural Science Foundation of China (Grant Nos. 50577021, 50877025)the Doctoral Program Foundation of Institutions of Higher Education of China (Grant No. 200800790004)
文摘In order to reveal the conduction mechanism of ZnO varistor, the pulsed electroacoustic (PEA) measurement is employed to investigate the space charge distribution characteristics of ZnO varistors under different current densities in this paper. Experimental results show that the relationship between the space charge and the current density is consistent with the voltage-current characteristics, and can reflect the nonlinear characteristics of ZnO varistor. The space charge increases linearly with the increase of the electric field strength and the current density in the small current region, this reflects the decrease of the surface states of the grain boundary and changes of the Schottky barrier. There exists a transition region between the small current and middle current regions, where the current is composed of the current by the emission of thermally activated electrons and the tunneling current. In the middle current region, the space charge will decrease as the current increases, and will disappear with the depletion layer decreasing to zero.
文摘Graphene, a single atomic layer of sp2-hybridized carbon, has immense potential as a transparent conducting material in electronic applications owing to its superior properties, including optical transparency and high conductivity. Particularly, the tunable work function of graphene enables the integration of graphene electrodes with various electronic devices. To achieve high performance in graphene-based devices, effective charge transport between the graphene electrode and the semiconducting material needs to be optimized; this is closely related to the modulation of the Schottky barrier （SB）. In this study, we investigate the ~nable charge transport properties as a function of graphene doping in n-channel thin-film transistors （TFTs） in terms of the electrical characteristics and low-frequency noise （LFN） behaviors. Alkali metal carbonates tuned the work function of graphene, resulting in a dramatic decrease in the SB and an improvement of the carrier injection in n-channel TFTs. The electrical performance of the TFTs was evaluated by extraction of the field-effect mobilities and ratio of contact resistance to total resistance. Furthermore, the level of contact noise created by the barrier height fluctuation and relative contribution of channel noise and contact noise in the TFTs was investigated by LFN measurements to demonstrate the ~nable charge transport. Our findings therefore provide new insights into the tunable charge transport mechanism in graphene-based devices and reveal the immense potential of graphene as electrodes in high performance flexible and transparent displays.
