ZnO thin films were deposited on Si（111） substrates through a radio frequency （rf） magnetron sputtering system. Then the samples were annealed at different temperatures in air ambience and ammonia ambience respect...ZnO thin films were deposited on Si（111） substrates through a radio frequency （rf） magnetron sputtering system. Then the samples were annealed at different temperatures in air ambience and ammonia ambience respectively. The structure and composition of the ZnO films were studied by X-ray diffraction （XRD） and X-ray photoelectron spectroscopy （XPS）. The morphology of the samples was studied by scanning electron microscopy （SEM）. Measured results show that ZnO films with hexagonal wurtzite structure were grown on Si（111） substrates when annealed in the two ambiences. The volatilization process of ZnO in the ammonia ambience at high temperature was discussed and the mechanism of the reaction was analyzed.展开更多
A series of ZnO-CdO thin films of different molar ratios of Zn and Cd have been deposited on glass sub- strate at substrate temperature -360℃ by the spray pyrolysis technique at an ambient atmosphere. X-ray diffracti...A series of ZnO-CdO thin films of different molar ratios of Zn and Cd have been deposited on glass sub- strate at substrate temperature -360℃ by the spray pyrolysis technique at an ambient atmosphere. X-ray diffraction （XRD） studies confirmed the polycrystalline nature of the film and modulated crystal structures ofwurtzite （ZnO） and cubic （CdO） are formed. The evaluated lattice parameters, and crystallite size are consistent with literature. Dislocation density and strain increased in the film as the grain sizes of ZnO and CdO are decreased. The band gap energy varies from 3.20 to 2.21 eV depending on the Zn/Cd ratios in the film. An incident photon intensity dependent I-V study confirmed that the films are highly photosensitive. Current increased with the increase of the intensity of the light beam. The optical conductivity and the optical constants, such as extinction coefficient, refractive index and complex dielectric constants are evaluated from transmittance and reflectance spectra of the films and these parameters are found to be sensitive to photon energy and displayed intermediate optical properties between ZnO and CdO, making it preferable for applications as the buffer and window layers in solar cells.展开更多
基金This work was financially supported by the Key Research Program of National Natural Science Foundation of China (Nos.90301002 and 90201025).
文摘ZnO thin films were deposited on Si（111） substrates through a radio frequency （rf） magnetron sputtering system. Then the samples were annealed at different temperatures in air ambience and ammonia ambience respectively. The structure and composition of the ZnO films were studied by X-ray diffraction （XRD） and X-ray photoelectron spectroscopy （XPS）. The morphology of the samples was studied by scanning electron microscopy （SEM）. Measured results show that ZnO films with hexagonal wurtzite structure were grown on Si（111） substrates when annealed in the two ambiences. The volatilization process of ZnO in the ammonia ambience at high temperature was discussed and the mechanism of the reaction was analyzed.
基金the Ministry of Science and Information & Communication Technology(MOSICT) of the People's Republic of Bangladesh for providing financial support
文摘A series of ZnO-CdO thin films of different molar ratios of Zn and Cd have been deposited on glass sub- strate at substrate temperature -360℃ by the spray pyrolysis technique at an ambient atmosphere. X-ray diffraction （XRD） studies confirmed the polycrystalline nature of the film and modulated crystal structures ofwurtzite （ZnO） and cubic （CdO） are formed. The evaluated lattice parameters, and crystallite size are consistent with literature. Dislocation density and strain increased in the film as the grain sizes of ZnO and CdO are decreased. The band gap energy varies from 3.20 to 2.21 eV depending on the Zn/Cd ratios in the film. An incident photon intensity dependent I-V study confirmed that the films are highly photosensitive. Current increased with the increase of the intensity of the light beam. The optical conductivity and the optical constants, such as extinction coefficient, refractive index and complex dielectric constants are evaluated from transmittance and reflectance spectra of the films and these parameters are found to be sensitive to photon energy and displayed intermediate optical properties between ZnO and CdO, making it preferable for applications as the buffer and window layers in solar cells.
