摘要
在硅基上制备出了c轴取向高度一致的ZnO薄膜 ,这将有可能成为新型GaN单晶薄膜的过渡层。对ZnO薄膜的晶体性能进行了分析 ,研究不同衬底和不同衬底温度对ZnO薄膜的结晶状况的影响 ,并着重用TEM研究了硅基ZnO薄膜的晶体性能。
Highly c axis oriented zinc oxide thin film was grown on Si substrates by magnetron sputtering.The films can possibly be used as an effective buffer layer in GaN film growth.The crystal structures of the ZnO films were studied with transmission electron microscopy and the influence of substrate temperatures and the properties of different substrates were also studied to optimize the growth of quality ZnO films.
出处
《真空科学与技术》
EI
CSCD
北大核心
1999年第5期349-352,共4页
Vacuum Science and Technology
基金
国家博士点基金
