摘要
采用脉冲激光沉积(PLD)方法在S i(100)上成功生长了高度c轴取向的A lN薄膜,并以此为衬底,实现了ZnO薄膜的低温准外延生长。通过X射线衍射(XRD)、原子力显微镜(AFM)以及荧光分光光度计表征ZnO薄膜的结构、表面形貌和发光性能。结果表明,ZnO薄膜能在A lN过渡层上沿c轴准外延生长,采用A lN过渡层后,其荧光强度也有大幅提高。
Highly c-axis oriented AlN films were successfully prepared on Si （100） by pulse laser deposition, and quasi-epitaxial growth of ZnO films on the Si substrates with AlN buffer layers was realized. The structure and surface morphology of the deposited ZnO films were characterized by X-ray diffraction spectra and atomic force microscopy. XRD results show that epitaxial growth of c-axis oriented ZnO films with AlN buffer layers was obtained. Moreover, the intensity of photoluminescence of the ZnO films increased significantly.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2005年第6期1132-1136,共5页
Journal of Synthetic Crystals
基金
上海市纳米专项基金资助(No.0352nm009)
关键词
氧化锌薄膜
外延生长
过渡层
光致发光
ZnO film
epitaxial growth
buffer layers
photoluminescence
