针对UPS(Uninterruptible Power Supply)的核心逆变器件VDMOS管工作在高功率、大电流下易损坏使得UPS无法正常工作、故障率高的问题,提出了一种低频噪声测量的方法来判断其工作状态。首先建立了功率VDMOS器件的低频噪声模型;然后设计了...针对UPS(Uninterruptible Power Supply)的核心逆变器件VDMOS管工作在高功率、大电流下易损坏使得UPS无法正常工作、故障率高的问题,提出了一种低频噪声测量的方法来判断其工作状态。首先建立了功率VDMOS器件的低频噪声模型;然后设计了带补偿网络的超低噪声低频放大器;最后对山特MT1000-PR0型UPS测试,结果表明,该方法能够测量到UPS核心逆变器件VDMOS的低频噪声并准确判断其工作状态,且在准确率上较传统方法提高了85%,为UPS的典型故障提供了一种可行及有效的评估方法。展开更多
Total dose effects and annealing behavior of domestic n-channel VDMOS devices under different bias conditions were investigated. The dependences of typical electrical parameters such as threshold voltage, breakdown vo...Total dose effects and annealing behavior of domestic n-channel VDMOS devices under different bias conditions were investigated. The dependences of typical electrical parameters such as threshold voltage, breakdown voltage, leakage current, and on-state resistance upon total dose were discussed. We also observed the relationships between these parameters and annealing time. The experiment results show that： the threshold voltage negatively shifts with the increasing of total dose and continues to decrease at the beginning of 100 ℃ annealing; the breakdown voltage under the drain bias voltage has passed through the pre-irradiation threshold voltage during annealing behaving with a ＂rebound＂ effect; there is a latent interface-trap buildup （LITB） phenomenon in the VDMOS devices; the leakage current is suppressed; and on-state resistance is almost kept constant during irradiation and annealing. Our experiment results are meaningful and important for further improvements in the design and processing.展开更多
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships amon...Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.展开更多
文摘针对UPS(Uninterruptible Power Supply)的核心逆变器件VDMOS管工作在高功率、大电流下易损坏使得UPS无法正常工作、故障率高的问题,提出了一种低频噪声测量的方法来判断其工作状态。首先建立了功率VDMOS器件的低频噪声模型;然后设计了带补偿网络的超低噪声低频放大器;最后对山特MT1000-PR0型UPS测试,结果表明,该方法能够测量到UPS核心逆变器件VDMOS的低频噪声并准确判断其工作状态,且在准确率上较传统方法提高了85%,为UPS的典型故障提供了一种可行及有效的评估方法。
文摘Total dose effects and annealing behavior of domestic n-channel VDMOS devices under different bias conditions were investigated. The dependences of typical electrical parameters such as threshold voltage, breakdown voltage, leakage current, and on-state resistance upon total dose were discussed. We also observed the relationships between these parameters and annealing time. The experiment results show that： the threshold voltage negatively shifts with the increasing of total dose and continues to decrease at the beginning of 100 ℃ annealing; the breakdown voltage under the drain bias voltage has passed through the pre-irradiation threshold voltage during annealing behaving with a ＂rebound＂ effect; there is a latent interface-trap buildup （LITB） phenomenon in the VDMOS devices; the leakage current is suppressed; and on-state resistance is almost kept constant during irradiation and annealing. Our experiment results are meaningful and important for further improvements in the design and processing.
文摘Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.
