In recent years, there has been remarkable progress in the performance of metal halide perovskite solar cells. Studies have shown significant interest in lead-free perovskite solar cells (PSCs) due to concerns about t...In recent years, there has been remarkable progress in the performance of metal halide perovskite solar cells. Studies have shown significant interest in lead-free perovskite solar cells (PSCs) due to concerns about the toxicity of lead in lead halide perovskites. CH3NH3SnI3 emerges as a viable alternative to CH3NH3PbX3. In this work, we studied the effect of various parameters on the performance of lead-free perovskite solar cells using simulation with the SCAPS 1D software. The cell structure consists of α-Fe2O3/CH3NH3SnI3/PEDOT: PSS. We analyzed parameters such as thickness, doping, and layer concentration. The study revealed that, without considering other optimized parameters, the efficiency of the cell increased from 22% to 35% when the perovskite thickness varied from 100 to 1000 nm. After optimization, solar cell efficiency reaches up to 42%. The optimization parameters are such that, for example, for perovskite: the layer thickness is 700 nm, the doping concentration is 1020 and the defect density is 1013 cm−3, and for hematite: the thickness is 5 nm, the doping concentration is 1022 and the defect concentration is 1011 cm−3. These results are encouraging because they highlight the good agreement between perovskite and hematite when used as the active and electron transport layers, respectively. Now, it is still necessary to produce real, viable photovoltaic solar cells with the proposed material layer parameters.展开更多
The graded bandgap of kesterite based absorber layer is an important way to achieve high efficiency solar cells. Incorporation of Ag into CZTSSe thin films can adjust the bandgap and thus reduce the VOC-deficit and im...The graded bandgap of kesterite based absorber layer is an important way to achieve high efficiency solar cells. Incorporation of Ag into CZTSSe thin films can adjust the bandgap and thus reduce the VOC-deficit and improve the quality of crystallization. However, the distribution of Ag is difficult to control due to the quick diffusion of Ag under the high temperature. In this study, we achieve the front Ag-gradient in kesterite structured compound films by prealloying followed by selenization process at 550 °C. AgZn3,Ag3Sn, and Sn–Ag–Cu alloy phases were formed during prealloying stage at 250 °C. After prealloying process, Ag tends to distribute at the front surface of the ACZTSe thin films. Combining the results of experiment and SCAPS simulation, the significantly VOCimprovement of devices is ascribed to the formation of the front Ag-gradient bandgap structure in the absorber layer. This facile prealloying selenization process affords a feasible method to design the graded bandgap structure absorber layers, which will promote the fabrication of high efficient graded bandgap structure solar cells.展开更多
In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance si...In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance simulator (SCAPS-1D) software to examine the performance of this type of organic polymer thin-film solar cell by varying the thickness of the active layer. PFN-Br interfacial layer entrenched in OPV devices gives overall enhanced open-circuit voltage, short-circuit current density and fill factor thus improving device performance. PEDOT: PSS is an electro-conductive polymer solution that has been extensively utilized in solar cell devices as a hole transport layer (HTL) due to its strong hole affinity, good thermal and mechanical stability, high work function, and high transparency in the visible range. The structure of the organic solar cell is ITO/PEDOT: PSS/BTP-4F: PBDB-T-2F/PFN-Br/Ag. Firstly, the active layer thickness was optimized to 100 nm;after that, the active-layer thickness was varied up to 900 nm. The results of these simulations demonstrated that the active layer thickness improves efficiency significantly up to 500 nm, then it decreased with increasing the thickness of the active layer from 600 nm, also notice that the short circuit current and the fill factor decrease with increasing the active layer from 600 nm, while the open voltage circuit increased with increasing the thickness of the active layer. The optimum thickness is 500 nm.展开更多
Perovskite materials have drawn a lot of interest recently due to their potential to increase solar cell efficiency. This study uses the solar cell capacitance simulator (SCAPS-1D) to develop and simulate a perovskite...Perovskite materials have drawn a lot of interest recently due to their potential to increase solar cell efficiency. This study uses the solar cell capacitance simulator (SCAPS-1D) to develop and simulate a perovskite solar cell made of semiconductor materials. The design that has been suggested is Al:ZnO/ZnO/CdS/CsSnCl<sub>3</sub> and MoS<sub>2</sub>. The analysis focuses on how different characteristics of the material affect the device’s performance. The analysis of the data reveals that the architecture had 26.15% power conversion efficiency (PCE). The solar cell creates an interest in developing a non-toxic solar cell with low manufacturing costs, outstanding conversion efficiency, and stability.展开更多
Abstract： This work reports on modeling IB （intermediate band） solar cells based on ZnTe：O semiconductor and determination of their photovoltaic parameters using SCAPS （solar cell capacitance simulator） software...Abstract： This work reports on modeling IB （intermediate band） solar cells based on ZnTe：O semiconductor and determination of their photovoltaic parameters using SCAPS （solar cell capacitance simulator） software. A comparative study between photovoltaic performance of ZnTe and ZnTe：O based solar cells has been carried out. It has been found that the energy conversion efficiency r/, short-circuit current density Jsc, EQE （external quantum efficiency） and FF （fill factor） increased with increasing oxygen doping concentration Nt up to the shallow acceptor density NA and decreased when Nt was higher than NA. The open circuit-voltage Voc remained constant for N lower than the acceptor doping concentration NA and decreased for Nt higher than NA. The increase of , Jsc and FF is due to the fact that IB is fully empted, so sub-bandgap photons can be absorbed by hole photoemission process from the VB （valence band） to the IB. The decrease of r/, J, EQE and FF is attributed to overcompensation for the base doping NA making electron photoemission process from IB to the CB （conduction band） maximized. This indicates that there is a competition between oxygen doping and intrinsic acceptor defects. The optimal concentrations of oxygen and shallow acceptor carriers were found to be Nr 1015 cm-3 and NA 1014 cm3, The corresponding photovoltaic parameters were r/= 41.5%, J = 31.2 mA/cm2, Voc = 1.80 V and FF = 75.1%. Finally, the EQE spectra showed a blue shift of absorption edge indicating that the absorption process is extended to the sub-bandgap photons through lB.展开更多
The photovoltaic performance (efficiency η) of an ITO/CdS/CdTe structure cell is studied in this article according to its electrical properties. The study is carried out by simulation with SCAPS (Solar Cell Capacitan...The photovoltaic performance (efficiency η) of an ITO/CdS/CdTe structure cell is studied in this article according to its electrical properties. The study is carried out by simulation with SCAPS (Solar Cell Capacitance Simulator) whose mathematical model is based on solving the equations of Poisson and continuity of electrons and holes. An electrical conversion efficiency of 23.58% is obtained by optimizing the mobility of the electrons (100 cm2/Vs), that of the holes (25 cm2/Vs), the density of electrons (1015 cm-3), the density of the effective states in the conduction band (7.9 × 1017 cm-3) and the electronic affinity (3.85 eV) of the CdTe absorbent layer.展开更多
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
文摘In recent years, there has been remarkable progress in the performance of metal halide perovskite solar cells. Studies have shown significant interest in lead-free perovskite solar cells (PSCs) due to concerns about the toxicity of lead in lead halide perovskites. CH3NH3SnI3 emerges as a viable alternative to CH3NH3PbX3. In this work, we studied the effect of various parameters on the performance of lead-free perovskite solar cells using simulation with the SCAPS 1D software. The cell structure consists of α-Fe2O3/CH3NH3SnI3/PEDOT: PSS. We analyzed parameters such as thickness, doping, and layer concentration. The study revealed that, without considering other optimized parameters, the efficiency of the cell increased from 22% to 35% when the perovskite thickness varied from 100 to 1000 nm. After optimization, solar cell efficiency reaches up to 42%. The optimization parameters are such that, for example, for perovskite: the layer thickness is 700 nm, the doping concentration is 1020 and the defect density is 1013 cm−3, and for hematite: the thickness is 5 nm, the doping concentration is 1022 and the defect concentration is 1011 cm−3. These results are encouraging because they highlight the good agreement between perovskite and hematite when used as the active and electron transport layers, respectively. Now, it is still necessary to produce real, viable photovoltaic solar cells with the proposed material layer parameters.
基金supported by the National Natural Science Foundation of China(51572132,61674082,61774089)Tianjin Natural Science Foundation of Key Project(16JCZDJC30700,18JCZDJC31200)+1 种基金YangFan Innovative and Entrepreneurial Research Team Project(2014YT02N037)111 Project(B16027)
文摘The graded bandgap of kesterite based absorber layer is an important way to achieve high efficiency solar cells. Incorporation of Ag into CZTSSe thin films can adjust the bandgap and thus reduce the VOC-deficit and improve the quality of crystallization. However, the distribution of Ag is difficult to control due to the quick diffusion of Ag under the high temperature. In this study, we achieve the front Ag-gradient in kesterite structured compound films by prealloying followed by selenization process at 550 °C. AgZn3,Ag3Sn, and Sn–Ag–Cu alloy phases were formed during prealloying stage at 250 °C. After prealloying process, Ag tends to distribute at the front surface of the ACZTSe thin films. Combining the results of experiment and SCAPS simulation, the significantly VOCimprovement of devices is ascribed to the formation of the front Ag-gradient bandgap structure in the absorber layer. This facile prealloying selenization process affords a feasible method to design the graded bandgap structure absorber layers, which will promote the fabrication of high efficient graded bandgap structure solar cells.
文摘In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance simulator (SCAPS-1D) software to examine the performance of this type of organic polymer thin-film solar cell by varying the thickness of the active layer. PFN-Br interfacial layer entrenched in OPV devices gives overall enhanced open-circuit voltage, short-circuit current density and fill factor thus improving device performance. PEDOT: PSS is an electro-conductive polymer solution that has been extensively utilized in solar cell devices as a hole transport layer (HTL) due to its strong hole affinity, good thermal and mechanical stability, high work function, and high transparency in the visible range. The structure of the organic solar cell is ITO/PEDOT: PSS/BTP-4F: PBDB-T-2F/PFN-Br/Ag. Firstly, the active layer thickness was optimized to 100 nm;after that, the active-layer thickness was varied up to 900 nm. The results of these simulations demonstrated that the active layer thickness improves efficiency significantly up to 500 nm, then it decreased with increasing the thickness of the active layer from 600 nm, also notice that the short circuit current and the fill factor decrease with increasing the active layer from 600 nm, while the open voltage circuit increased with increasing the thickness of the active layer. The optimum thickness is 500 nm.
文摘Perovskite materials have drawn a lot of interest recently due to their potential to increase solar cell efficiency. This study uses the solar cell capacitance simulator (SCAPS-1D) to develop and simulate a perovskite solar cell made of semiconductor materials. The design that has been suggested is Al:ZnO/ZnO/CdS/CsSnCl<sub>3</sub> and MoS<sub>2</sub>. The analysis focuses on how different characteristics of the material affect the device’s performance. The analysis of the data reveals that the architecture had 26.15% power conversion efficiency (PCE). The solar cell creates an interest in developing a non-toxic solar cell with low manufacturing costs, outstanding conversion efficiency, and stability.
文摘Abstract： This work reports on modeling IB （intermediate band） solar cells based on ZnTe：O semiconductor and determination of their photovoltaic parameters using SCAPS （solar cell capacitance simulator） software. A comparative study between photovoltaic performance of ZnTe and ZnTe：O based solar cells has been carried out. It has been found that the energy conversion efficiency r/, short-circuit current density Jsc, EQE （external quantum efficiency） and FF （fill factor） increased with increasing oxygen doping concentration Nt up to the shallow acceptor density NA and decreased when Nt was higher than NA. The open circuit-voltage Voc remained constant for N lower than the acceptor doping concentration NA and decreased for Nt higher than NA. The increase of , Jsc and FF is due to the fact that IB is fully empted, so sub-bandgap photons can be absorbed by hole photoemission process from the VB （valence band） to the IB. The decrease of r/, J, EQE and FF is attributed to overcompensation for the base doping NA making electron photoemission process from IB to the CB （conduction band） maximized. This indicates that there is a competition between oxygen doping and intrinsic acceptor defects. The optimal concentrations of oxygen and shallow acceptor carriers were found to be Nr 1015 cm-3 and NA 1014 cm3, The corresponding photovoltaic parameters were r/= 41.5%, J = 31.2 mA/cm2, Voc = 1.80 V and FF = 75.1%. Finally, the EQE spectra showed a blue shift of absorption edge indicating that the absorption process is extended to the sub-bandgap photons through lB.
文摘The photovoltaic performance (efficiency η) of an ITO/CdS/CdTe structure cell is studied in this article according to its electrical properties. The study is carried out by simulation with SCAPS (Solar Cell Capacitance Simulator) whose mathematical model is based on solving the equations of Poisson and continuity of electrons and holes. An electrical conversion efficiency of 23.58% is obtained by optimizing the mobility of the electrons (100 cm2/Vs), that of the holes (25 cm2/Vs), the density of electrons (1015 cm-3), the density of the effective states in the conduction band (7.9 × 1017 cm-3) and the electronic affinity (3.85 eV) of the CdTe absorbent layer.
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
