摘要
采用太阳电池电容模拟软件(简称SCAPS)对p-i-n结构的微晶硅同质结薄膜太阳电池进行了数值模拟。研究了本征层的厚度和缺陷态浓度及窗口层的厚度等参数对电池性能的影响。得到的主要结论如下:(1)随着本征层缺陷态浓度Nt的增加,电池的各性能参数均单调下降。(2)随着本征层厚度的增加,长波段的光谱响应逐渐改善,但该层过厚则导致中波段的光谱响应急剧下降,在Nt=1.0×1016/cm3的条件下,本征层厚度在1.5～2.0μm范围内电池效率均可达到7.0%以上。(3)p型窗口层的厚度对短波段的光谱响应及短路电流密度JSC有较大影响。
Microcrystalline silicon （Ixc-Si：H） homojunction thin film solar cells of p-i-n structure were simulated by the software SCAPS （Solar Cell Capacitance Simulator ）. The effects of the i-layer＇s defect concentration and thickness and the p-layer＇s thickness on the performance of the solar cell were analyzed. The main results were as follows. （1） The open circuit voltage Voc, short circuit current density Jsc, fill factor FF and conversion efficiency 7/ of the solar cell all decline monotonously with the increasing i-layer＇s defect concentration N,. （2） The spectral response to long-wavelength region improves gradually, but the response to medium -wavelength region decreases sharply if the i-layer is too thick. The conversion efficiency of the solar cells with the i-layer thickness in the range from 1.Sp.m to 2.0um comes up to over 7% when the i-layer＇s defect concentration N, is equal to 1.0 × 10^16/cm^3. （3） The thickness of p-layer affects greatly the spectral response to short-wavelength region and short-circuit current density Jsc.
出处
《真空》
CAS
北大核心
2010年第1期46-50,共5页
Vacuum
基金
国家重点基础研究发展计划(2006CB202601)
河南省科技厅自然科学基金项目(072300410080)
河南省教育厅自然科学基金项目(2008B140012)
关键词
微晶硅同质结薄膜太阳电池
数值模拟
SCAPS
电池性能
光谱响应
uc-Si：H homojunction thin film solar cell
numerical simulation
SCAPS
performance of solar cell
spectral response
