基于Ga As肖特基二极管工艺,研制了一款无源毫米波二倍频器单片微波集成电路（MMIC）。该电路的拓扑结构包含并联二极管对,输入巴伦和输入、输出匹配电路,其中输入巴伦为螺旋型Marchand巴伦,使电路输入输出端具有奇偶次谐波相互隔离的特...基于Ga As肖特基二极管工艺,研制了一款无源毫米波二倍频器单片微波集成电路（MMIC）。该电路的拓扑结构包含并联二极管对,输入巴伦和输入、输出匹配电路,其中输入巴伦为螺旋型Marchand巴伦,使电路输入输出端具有奇偶次谐波相互隔离的特点,不仅抑制了输出奇次谐波,而且增加了线间的耦合,显著减小了芯片的面积。在设计软件对电路进行仿真优化的基础上,经过实际流片并对芯片进行了测试,实现了输入功率为15 d Bm时,输出频率在44~60 GHz处,输出功率大于-1 d Bm,变频损耗小于16 d B,对基波和各次谐波抑制度大于30 d Bc的技术指标。芯片实际尺寸为1.45 mm×1.1 mm。展开更多
为了提高1 550 nm近红外波段光斑位置的检测精度,提出了一种改进的积分无穷解算模型。以高斯光斑为入射光模型,深入分析了In Ga As四象限探测器(Quadrant Detector,QD)输出信号与光斑实际位置之间的关系,考虑探测器直径及沟道的影响,通...为了提高1 550 nm近红外波段光斑位置的检测精度,提出了一种改进的积分无穷解算模型。以高斯光斑为入射光模型,深入分析了In Ga As四象限探测器(Quadrant Detector,QD)输出信号与光斑实际位置之间的关系,考虑探测器直径及沟道的影响,通过引入误差补偿因子,利用最小二乘拟合的方法得到有效光斑半径,从而获得新解算模型的解析表达式,最后在搭建的In Ga As QD光斑位置检测系统上对提出模型进行实验验证。仿真和实验结果表明:新模型可有效降低不同半径光斑下的位置检测误差;入射光总能量约为10μW,光斑半径0.75 mm时,在[-0.75~0.75 mm]检测范围内,新模型均方根误差为0.003 mm,最大误差为0.009 mm,较原有模型分别降低了78.6%和52.6%。新模型在激光通信和激光雷达等工程实际中具有较好的应用前景。展开更多
High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor（MOS） capacitors with La ON as interfacial passivation layer（IPL） and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial an...High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor（MOS） capacitors with La ON as interfacial passivation layer（IPL） and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither La ON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated Ga As MOS device with a stacked gate dielectric of Hf Ti ON/La ON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, La ON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/Ga As interface.展开更多
结合混合微波集成电路（HMIC）工艺和砷化镓单片微波集成电路（MMIC）工艺各自优势,设计制作了一款小型化大功率S波段平衡式限幅MMIC低噪声放大器。采用平衡式结构,提高了限幅功率容量和可靠性。由于金丝键合线的等效电感具有更高Q值,...结合混合微波集成电路（HMIC）工艺和砷化镓单片微波集成电路（MMIC）工艺各自优势,设计制作了一款小型化大功率S波段平衡式限幅MMIC低噪声放大器。采用平衡式结构,提高了限幅功率容量和可靠性。由于金丝键合线的等效电感具有更高Q值,低噪声放大器单片的输入匹配采用外部金丝键合线匹配,有效降低了低噪声放大器单片的噪声系数。限幅器采用混合集成工艺制成,能够耐受较大功率。利用微波仿真软件,设计制作了兰格（Lange）电桥、限幅电路和低噪声放大器输入匹配等电路。最终产品尺寸仅为22 mm×16 mm×6 mm,在2.7~3.5 GHz内增益27~28 d B,噪声系数小于1.3 d B,驻波比小于1.3,该平衡限幅MMIC低噪声放大器可承受功率超过200 W、占空比为15%的脉冲功率冲击。展开更多
基于Ga As单片集成电路工艺,对接收通道的关键元器件低噪声放大器和电调衰减器进行了芯片化设计。采用基于多层高温共烧陶瓷埋线工艺设计的金属化陶瓷外壳,对接收通道进行了微组装。测试结果表明,该S波段接收通道接收动态范围大于60 d B...基于Ga As单片集成电路工艺,对接收通道的关键元器件低噪声放大器和电调衰减器进行了芯片化设计。采用基于多层高温共烧陶瓷埋线工艺设计的金属化陶瓷外壳,对接收通道进行了微组装。测试结果表明,该S波段接收通道接收动态范围大于60 d B,增益大于95 d B,噪声系数小于1.3 d B,本振抑制大于30 d Bc,中频信号的谐波抑制大于30 d Bc。当中频自动增益控制电路起控时,接收通道输出功率稳定在(2±0.5)d Bm。该接收通道采用+5 V供电,工作电流小于250 m A。整个接收通道的尺寸仅为20 mm×13.8 mm×5.75 mm,其性能优异且集成度非常高,小型化优势非常明显。展开更多
We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid m...We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition（MOCVD）. Diethyl–zinc and silane are used as p- and n-type dopant precursors,respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.展开更多
文摘基于Ga As肖特基二极管工艺,研制了一款无源毫米波二倍频器单片微波集成电路（MMIC）。该电路的拓扑结构包含并联二极管对,输入巴伦和输入、输出匹配电路,其中输入巴伦为螺旋型Marchand巴伦,使电路输入输出端具有奇偶次谐波相互隔离的特点,不仅抑制了输出奇次谐波,而且增加了线间的耦合,显著减小了芯片的面积。在设计软件对电路进行仿真优化的基础上,经过实际流片并对芯片进行了测试,实现了输入功率为15 d Bm时,输出频率在44~60 GHz处,输出功率大于-1 d Bm,变频损耗小于16 d B,对基波和各次谐波抑制度大于30 d Bc的技术指标。芯片实际尺寸为1.45 mm×1.1 mm。
文摘为了提高1 550 nm近红外波段光斑位置的检测精度,提出了一种改进的积分无穷解算模型。以高斯光斑为入射光模型,深入分析了In Ga As四象限探测器(Quadrant Detector,QD)输出信号与光斑实际位置之间的关系,考虑探测器直径及沟道的影响,通过引入误差补偿因子,利用最小二乘拟合的方法得到有效光斑半径,从而获得新解算模型的解析表达式,最后在搭建的In Ga As QD光斑位置检测系统上对提出模型进行实验验证。仿真和实验结果表明:新模型可有效降低不同半径光斑下的位置检测误差;入射光总能量约为10μW,光斑半径0.75 mm时,在[-0.75~0.75 mm]检测范围内,新模型均方根误差为0.003 mm,最大误差为0.009 mm,较原有模型分别降低了78.6%和52.6%。新模型在激光通信和激光雷达等工程实际中具有较好的应用前景。
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176100 and 61274112)
文摘High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor（MOS） capacitors with La ON as interfacial passivation layer（IPL） and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither La ON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated Ga As MOS device with a stacked gate dielectric of Hf Ti ON/La ON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, La ON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/Ga As interface.
文摘结合混合微波集成电路（HMIC）工艺和砷化镓单片微波集成电路（MMIC）工艺各自优势,设计制作了一款小型化大功率S波段平衡式限幅MMIC低噪声放大器。采用平衡式结构,提高了限幅功率容量和可靠性。由于金丝键合线的等效电感具有更高Q值,低噪声放大器单片的输入匹配采用外部金丝键合线匹配,有效降低了低噪声放大器单片的噪声系数。限幅器采用混合集成工艺制成,能够耐受较大功率。利用微波仿真软件,设计制作了兰格（Lange）电桥、限幅电路和低噪声放大器输入匹配等电路。最终产品尺寸仅为22 mm×16 mm×6 mm,在2.7~3.5 GHz内增益27~28 d B,噪声系数小于1.3 d B,驻波比小于1.3,该平衡限幅MMIC低噪声放大器可承受功率超过200 W、占空比为15%的脉冲功率冲击。
文摘提出了满足行波管功率放大器(TWTA)要求的毫米波段的可调预失真线性化器,该预失真器基于90°定向耦合器、Ga As肖特基二极管、微带线和负载电阻,产生预失真信号。通过调节Ga As肖特基二极管的偏置电压、微带线电长度及负载电阻可以得到不同的增益扩展和相位扩张效应,在频率为29 GHz^31 GHz和额定输入功率范围内,增益扩展范围为5 d B^11.5 d B,相位扩张范围为35°~65°。仿真及实测结果表明:该预失真电路可调性强,满足通信工程TWTA的补偿需求。
文摘基于Ga As单片集成电路工艺,对接收通道的关键元器件低噪声放大器和电调衰减器进行了芯片化设计。采用基于多层高温共烧陶瓷埋线工艺设计的金属化陶瓷外壳,对接收通道进行了微组装。测试结果表明,该S波段接收通道接收动态范围大于60 d B,增益大于95 d B,噪声系数小于1.3 d B,本振抑制大于30 d Bc,中频信号的谐波抑制大于30 d Bc。当中频自动增益控制电路起控时,接收通道输出功率稳定在(2±0.5)d Bm。该接收通道采用+5 V供电,工作电流小于250 m A。整个接收通道的尺寸仅为20 mm×13.8 mm×5.75 mm,其性能优异且集成度非常高,小型化优势非常明显。
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376019 and 61020106007)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120005110011)+2 种基金the Natural Science Foundation of Beijing(Grant No.4142038)the 111 Program of China(Grant No.B07005)the Fund of the State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications)
文摘We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition（MOCVD）. Diethyl–zinc and silane are used as p- and n-type dopant precursors,respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.
