摘要
采用 Ga As75 mm 0 .7μm离子注入场效应晶体管 (MESFET)标准工艺技术研制出手机用 Ga As双刀双掷(DPDT)单片射频开关 (以下简称单片开关 ) .成品率分析表明 ,影响单片开关直流及射频参数成品率的主要因素包括 :材料几何参数、注入退火均匀性、栅光刻成品率、挖槽控制及圆片沾污等 .优化工艺条件可以使单片开关直流成品率稳定在 90 %左右 ,微波成品率稳定在 80 %左右 。
A Ga As DPDT monolithic RF switch for wireless comm unication is developed by using Ga As 0 .7μm ion- implanta- tion MESFET technology.The yield analysis shows thatthe factors which influence the yield are substrate m echanical param - eters,the uniform of ion- implantation and annealing for active layer,the quality of gate,the recess control and wafer contami- nation etc.The improved process can keep the DC yield of this switch MMIC up to 90 % and RF yield 80 % .
基金
国家计委重大科技攻关资助项目~~
