Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target mate...Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target materials were fabricated by sintering in air, and ZAO transparent conductive films were prepared by RF magnetron sputtering on glass substrates. XRD proved that such films had an orientation of （002） crystal panel paralleled to the surface of the glass substrate. The average transmittance of the films in the visible region exceeded 80%.展开更多
采用热原子层沉积(ALD)方法,在固定氧化锌与氧化铝沉积比例的情况下,研究了不同温度下在玻璃衬底上沉积的掺铝氧化锌薄膜性能的变化,特别是"ALD窗口"温度的影响。通过计算薄膜沉积速率,得到了薄膜沉积的"ALD窗口"...采用热原子层沉积(ALD)方法,在固定氧化锌与氧化铝沉积比例的情况下,研究了不同温度下在玻璃衬底上沉积的掺铝氧化锌薄膜性能的变化,特别是"ALD窗口"温度的影响。通过计算薄膜沉积速率,得到了薄膜沉积的"ALD窗口"温度范围为225~275℃,相应的沉积速率为0.214 nm/cycle。分析样品的表面形貌后发现,虽然反应的温度有所不同,但薄膜的微观结构均为密集堆积的纺缍体,它们的尺寸受到温度、晶体结构等因素的影响。结构分析表明,在"ALD窗口"温度范围内,所有沉积得到的样品均为(100)择优取向,并且结晶质量、晶粒尺寸以及(002)峰的相对强度均随着温度升高而增大。薄膜的光学透过率以及光学带隙没有随温度变化而表现出明显的变化,分别在80%(350~770 nm)和3.90 e V左右。薄膜的电导率和光学质量在"ALD窗口"内随温度增加而增长,直到300℃时达到最佳。展开更多
In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550...In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO_2 and Al-doped HfO_2 films are both amorphous. After550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO_2 film while the Al-doped HfO_2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO_2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO_2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.展开更多
基金supported by the National Key Basic Research Program of China(973)(2006CB202605)National High-Tech Research and Development Program of China(863)(2007AA05Z439)National Natural Science Foundation of China(20973183)~~
文摘Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target materials were fabricated by sintering in air, and ZAO transparent conductive films were prepared by RF magnetron sputtering on glass substrates. XRD proved that such films had an orientation of （002） crystal panel paralleled to the surface of the glass substrate. The average transmittance of the films in the visible region exceeded 80%.
文摘采用热原子层沉积(ALD)方法,在固定氧化锌与氧化铝沉积比例的情况下,研究了不同温度下在玻璃衬底上沉积的掺铝氧化锌薄膜性能的变化,特别是"ALD窗口"温度的影响。通过计算薄膜沉积速率,得到了薄膜沉积的"ALD窗口"温度范围为225~275℃,相应的沉积速率为0.214 nm/cycle。分析样品的表面形貌后发现,虽然反应的温度有所不同,但薄膜的微观结构均为密集堆积的纺缍体,它们的尺寸受到温度、晶体结构等因素的影响。结构分析表明,在"ALD窗口"温度范围内,所有沉积得到的样品均为(100)择优取向,并且结晶质量、晶粒尺寸以及(002)峰的相对强度均随着温度升高而增大。薄膜的光学透过率以及光学带隙没有随温度变化而表现出明显的变化,分别在80%(350~770 nm)和3.90 e V左右。薄膜的电导率和光学质量在"ALD窗口"内随温度增加而增长,直到300℃时达到最佳。
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA016501)the National Natural Science Foundation of China(Grant Nos.61574168 and 61504163)
文摘In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO_2 and Al-doped HfO_2 films are both amorphous. After550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO_2 film while the Al-doped HfO_2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO_2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO_2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.
