摘要
采用化学气相沉积和直流溅射沉积方法成功制备了与基体附着力高的不同Pt厚度的Pt/碳纳米管(CNT)膜层。通过扫描电子显微镜(SEM)和能谱分析(EDS)分别对薄膜厚度和表面形貌以及膜层中Pt的含量进行了研究;通过电化学阻抗谱和循环伏安曲线分别对Pt和Pt/CNT对电极的光电催化性进行了研究。结果表明:CNT与基体具有良好的接触性,并且随Pt沉积时间的增加,Pt在CNT薄膜中的含量增加,染料敏化太阳电池(DSSC)的光电转化效率随Pt厚度的增加而增加;与单纯的Pt对电极相比,Pt/CNT对电极具有更高的活性比表面,更低的电子迁移电阻以及更高的还原电流密度;以Pt(80 nm)/CNT为对电极的DSSC具有最高的光电转化效率8.54%;另外,与Pt(80 nm)对电极相比,以Pt(40 nm)/CNT为对电极制备的DSSC具有更高的光电转化效率,因此,该新型对电极结构可大大节省贵金属Pt的用量,在DSSC的应用中具有很大的潜力。
Pt/CNT layer with different Pt thickness which has good contact with its substrate was prepared by chemical vapor deposition(CVD) and DC-sputtering. The film thickness,surface morphology and Pt content in the film were investigated by scanning electron microscopy(SEM) and energy dispersive spectrometer(EDS). The photoelectocatalysis properties of Pt and Pt/CNT counter electrodes were investigated by electro-chemical impedance spectroscopy(EIS) and cyclic voltammogram(CV). The results show that the CNT layer has good contact with the substrate and the content of Pt in CNT layer increases with the increasing of Pt deposition time. The photo-electrical conversion efficiency increases with the increasing of Pt layer thickness. Compared with the pure Pt electrodes, the Pt/CNT counter electrodes have larger active surface area, lower electron transfer resistance and higher reduction current density. The Pt(80 nm)/CNT based DSSC has high photo-electrical conversion efficiency of8.54%. The DSSC based on Pt(40 nm)/CNT counter electrode shows comparable photo-electrical conversion efficiency compared with the Pt(80 nm) based DSSC. The new counter electrode structure of Pt/CNT layer can significantly save the using of precious materials of Pt,showing great potential in DSSC application.
出处
《电源技术》
CAS
CSCD
北大核心
2016年第4期777-780,共4页
Chinese Journal of Power Sources