The Daniels’ barium vacancy layer model of semiconducting BaTiO3 ceramics is analyzed.A grain boundary barrier model with both acceptor states of grain boundary and barium vacancy diffusion layers for the transition ...The Daniels’ barium vacancy layer model of semiconducting BaTiO3 ceramics is analyzed.A grain boundary barrier model with both acceptor states of grain boundary and barium vacancy diffusion layers for the transition from PTC effect to grain boundary barrier layer (GBBL) capacitor is proposed.The proposed model solves the problem occurring in Daniels’ model and makes it possible to calculate physical properties of semiconducting BaTiO3 ceramics and relevant devices.展开更多
Voltage dependence of resistivity(VDR)is a widely existing phenomenon insemiconducting ceramics, but there is no quantitative study on this phenomenon. Inthis note, the quantitative results of voltage dependence of re...Voltage dependence of resistivity(VDR)is a widely existing phenomenon insemiconducting ceramics, but there is no quantitative study on this phenomenon. Inthis note, the quantitative results of voltage dependence of resistivity insemiconducting ceramics are obtained from the grain boundary barrier model, andthe methods to decrease the voltage dependence of resistivity in sendconductingceramics are proposed.展开更多
Grain boundary barrier layer （GBBL） capacitors are widely used for their excellent physical properties. But since the invention of BaTiO<sub>3</sub> GBBL capacitor in the 1960s, no theory can quantitativ...Grain boundary barrier layer （GBBL） capacitors are widely used for their excellent physical properties. But since the invention of BaTiO<sub>3</sub> GBBL capacitor in the 1960s, no theory can quantitatively describe their physical properties, which has resulted in many problems in the design and manufacture of GBBL capacitors. In this note, on the basis of grain-boundary-barrier model, we quantitatively analyze the physical properties and their limits of GBBL capacitors, and thus make designs and study the methods to improve the properties of GBBL capacitors.展开更多
文摘The Daniels’ barium vacancy layer model of semiconducting BaTiO3 ceramics is analyzed.A grain boundary barrier model with both acceptor states of grain boundary and barium vacancy diffusion layers for the transition from PTC effect to grain boundary barrier layer (GBBL) capacitor is proposed.The proposed model solves the problem occurring in Daniels’ model and makes it possible to calculate physical properties of semiconducting BaTiO3 ceramics and relevant devices.
文摘Voltage dependence of resistivity(VDR)is a widely existing phenomenon insemiconducting ceramics, but there is no quantitative study on this phenomenon. Inthis note, the quantitative results of voltage dependence of resistivity insemiconducting ceramics are obtained from the grain boundary barrier model, andthe methods to decrease the voltage dependence of resistivity in sendconductingceramics are proposed.
基金Project supported by the Educational Commission of Zhejiang Province
文摘Grain boundary barrier layer （GBBL） capacitors are widely used for their excellent physical properties. But since the invention of BaTiO<sub>3</sub> GBBL capacitor in the 1960s, no theory can quantitatively describe their physical properties, which has resulted in many problems in the design and manufacture of GBBL capacitors. In this note, on the basis of grain-boundary-barrier model, we quantitatively analyze the physical properties and their limits of GBBL capacitors, and thus make designs and study the methods to improve the properties of GBBL capacitors.
