摘要
对作者提出的晶界势垒模型作定量分析．由理论模型得到的结果定量解释了ＢａＴｉＯ３半导体陶瓷从ＰＴＣ特性向边界层电容效应过渡的有关现象；由此对ＢａＴｉＯ３半导体陶瓷边界层电容器和ＰＴＣ电阻器的性能作出了设计，设计值明显优于目前的实验值；对提高器件性能的方法作了探讨，提出了相应的措施．本文的结果为ＢａＴｉＯ３半导体陶瓷器件的设计。
The quantitative analyses for our proposed potentialbarrier model are given in this paper.The results quantitatively explain how the semiconducting BaTiO 3 ceramics transforms from PTC effect to GBBL capacitor.The designs of PTC resistors and GBBL capacitors from this model are made,and the design properties are much better than that of present experimental data.The mathods improving the properties of relevant devices are discussed.The model provides a theoretical basis for the design,manufacture and property improvement of semiconducting BaTiO 3 ceramic devices.
出处
《物理学报》
CSCD
北大核心
1996年第9期1543-1550,共8页
Acta Physica Sinica
基金
浙江省教育委员会资助
