摘要
The Daniels’ barium vacancy layer model of semiconducting BaTiO3 ceramics is analyzed.A grain boundary barrier model with both acceptor states of grain boundary and barium vacancy diffusion layers for the transition from PTC effect to grain boundary barrier layer (GBBL) capacitor is proposed.The proposed model solves the problem occurring in Daniels’ model and makes it possible to calculate physical properties of semiconducting BaTiO3 ceramics and relevant devices.
The Daniels' barium vacancy layer model of semiconducting BaTiO3 ceramics is analyzed.A grain boundary barrier model with both acceptor states of grain boundary and barium vacancy diffusion layers for the transition from PTC effect to grain boundary barrier layer (GBBL) capacitor is proposed.The proposed model solves the problem occurring in Daniels' model and makes it possible to calculate physical properties of semiconducting BaTiO3 ceramics and relevant devices.
