The X-ray Ф-scan technique was applied to determine the in-plane orientation relationship of the high T_csuperconductins bi-epitaxial junction. The result shows that the in-plane orientation relation of the films in ...The X-ray Ф-scan technique was applied to determine the in-plane orientation relationship of the high T_csuperconductins bi-epitaxial junction. The result shows that the in-plane orientation relation of the films in thetwo sides of the grain boundary can be easily obtained with this method. By controlling the growth condition,a 45° YBCO grain boundary can be made on the SrTiO_3 substrate.展开更多
The (h00) oriented YSZ (yttria-stabilized zirconia) buffer layers were grown successfully on (1120) and(1102) sapphire plane substrates by rf. planar target magnetron sputtering method. The effect of different dep-os...The (h00) oriented YSZ (yttria-stabilized zirconia) buffer layers were grown successfully on (1120) and(1102) sapphire plane substrates by rf. planar target magnetron sputtering method. The effect of different dep-osition conditions on the structure of YSZ films was studied X-ray diffraction rock curve and electron channel-ling pattern (ECP) showed that the YSZ films has highly oriented nature. YBCO (Y BaCuO) films were depos-ited on the YSZ / (1120) Al_2O_3 and (1102) Al_2O_3, substrate by in situ de inverted cyhdrical target magnetronsputtering method. T_c≥88K and J_c=1O × 10￣6A / cm￣2 at 77 K were achieved展开更多
Yttria-stabilized zirconia (YSZ) thin films with the c-axis texturing were successfully deposited onpolycrystalline metallic tape (Hastelloy-C) by a dc bias rf magnetron sputtering. X-ray measurements re-vealed that t...Yttria-stabilized zirconia (YSZ) thin films with the c-axis texturing were successfully deposited onpolycrystalline metallic tape (Hastelloy-C) by a dc bias rf magnetron sputtering. X-ray measurements re-vealed that the resulting YSZ films exhibited pure c-axis texturing. YBCO films deposited by using demaguetron sputtering on Hastelloy tape with YSZ buffer layer were c-axis oriented with △ω(FWHM of apeak in the rocking curve) = 5. 9° . T_c_o of 91 K and J_c of 2. 0 × 10￣3 A/cm￣2(77 K, OT) were obtained.展开更多
By the r. f. magnetron sputtering method, the CeO_2 buffer layers were prepared on (100) LaAlO_3 sub-strates. The results of X-ray diffraction and Ф-scan indicated that the CeO_2 films were unique ( 100)-orientedand ...By the r. f. magnetron sputtering method, the CeO_2 buffer layers were prepared on (100) LaAlO_3 sub-strates. The results of X-ray diffraction and Ф-scan indicated that the CeO_2 films were unique ( 100)-orientedand epitaxial. The YBa_2Cu_3O_(7-6)(YBCO) films, which were deposited on the CeO_2/LaAlO_3 by d. c. magnetronsputtering, exhibited transition temperatures of 89～91 K,and had critical current densities exceeding 10￣6 A/cm￣2 at 77 K in zero magnetic field.展开更多
In order to obtain bi epitaxial 45° grain boundary YBa 2Cu 3O 7 (YBCO) junctions, the in plane epitaxy of CeO 2 films on both MgO films and SrTiO 3 substrates was studied. Using magnetron sputtering techni...In order to obtain bi epitaxial 45° grain boundary YBa 2Cu 3O 7 (YBCO) junctions, the in plane epitaxy of CeO 2 films on both MgO films and SrTiO 3 substrates was studied. Using magnetron sputtering technique and decreasing the substrate temperature, 100% CeO 2∥MgO in plane orientation for bi epitaxial grain boundary junction can be obtained.展开更多
文摘The X-ray Ф-scan technique was applied to determine the in-plane orientation relationship of the high T_csuperconductins bi-epitaxial junction. The result shows that the in-plane orientation relation of the films in thetwo sides of the grain boundary can be easily obtained with this method. By controlling the growth condition,a 45° YBCO grain boundary can be made on the SrTiO_3 substrate.
文摘The (h00) oriented YSZ (yttria-stabilized zirconia) buffer layers were grown successfully on (1120) and(1102) sapphire plane substrates by rf. planar target magnetron sputtering method. The effect of different dep-osition conditions on the structure of YSZ films was studied X-ray diffraction rock curve and electron channel-ling pattern (ECP) showed that the YSZ films has highly oriented nature. YBCO (Y BaCuO) films were depos-ited on the YSZ / (1120) Al_2O_3 and (1102) Al_2O_3, substrate by in situ de inverted cyhdrical target magnetronsputtering method. T_c≥88K and J_c=1O × 10￣6A / cm￣2 at 77 K were achieved
文摘Yttria-stabilized zirconia (YSZ) thin films with the c-axis texturing were successfully deposited onpolycrystalline metallic tape (Hastelloy-C) by a dc bias rf magnetron sputtering. X-ray measurements re-vealed that the resulting YSZ films exhibited pure c-axis texturing. YBCO films deposited by using demaguetron sputtering on Hastelloy tape with YSZ buffer layer were c-axis oriented with △ω(FWHM of apeak in the rocking curve) = 5. 9° . T_c_o of 91 K and J_c of 2. 0 × 10￣3 A/cm￣2(77 K, OT) were obtained.
文摘By the r. f. magnetron sputtering method, the CeO_2 buffer layers were prepared on (100) LaAlO_3 sub-strates. The results of X-ray diffraction and Ф-scan indicated that the CeO_2 films were unique ( 100)-orientedand epitaxial. The YBa_2Cu_3O_(7-6)(YBCO) films, which were deposited on the CeO_2/LaAlO_3 by d. c. magnetronsputtering, exhibited transition temperatures of 89～91 K,and had critical current densities exceeding 10￣6 A/cm￣2 at 77 K in zero magnetic field.
文摘In order to obtain bi epitaxial 45° grain boundary YBa 2Cu 3O 7 (YBCO) junctions, the in plane epitaxy of CeO 2 films on both MgO films and SrTiO 3 substrates was studied. Using magnetron sputtering technique and decreasing the substrate temperature, 100% CeO 2∥MgO in plane orientation for bi epitaxial grain boundary junction can be obtained.
