摘要
In order to obtain bi epitaxial 45° grain boundary YBa 2Cu 3O 7 (YBCO) junctions, the in plane epitaxy of CeO 2 films on both MgO films and SrTiO 3 substrates was studied. Using magnetron sputtering technique and decreasing the substrate temperature, 100% CeO 2∥MgO in plane orientation for bi epitaxial grain boundary junction can be obtained.
In order to obtain bi epitaxial 45° grain boundary YBa 2Cu 3O 7 (YBCO) junctions, the in plane epitaxy of CeO 2 films on both MgO films and SrTiO 3 substrates was studied. Using magnetron sputtering technique and decreasing the substrate temperature, 100% CeO 2∥MgO in plane orientation for bi epitaxial grain boundary junction can be obtained.