对无线网络半年数据流量进行采集分析,制作基站级栅格化数据流量密度图,结合现网无线局域网(WLAN,Wireless Local Area Networks)热点的建设情况、WLAN热点的忙闲情况、现网全球移动通信系统(GSM,Global System For Mobile Communicatio...对无线网络半年数据流量进行采集分析,制作基站级栅格化数据流量密度图,结合现网无线局域网(WLAN,Wireless Local Area Networks)热点的建设情况、WLAN热点的忙闲情况、现网全球移动通信系统(GSM,Global System For Mobile Communications)无线利用率情况、载频配置情况,提出一种以现网高数据流量、高无线利用率为导向,分不同场景而进行WLAN选点的方法。该方法能紧跟业务发展需求,确保网络资源利用率,能使WLAN精确建网,避免热建冷用,有效分流GSM网络流量。展开更多
Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low- temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typ...Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low- temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 （μm） exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit （OEIC） devices.展开更多
Using two-step method InP epilayers were grown on GaAs（100） substrates by low-pressure metalorganic chemical vapor deposition （LP-MOCVD）. X-ray diffraction （XRD） and room-temperature （RT） photolu- minescence ...Using two-step method InP epilayers were grown on GaAs（100） substrates by low-pressure metalorganic chemical vapor deposition （LP-MOCVD）. X-ray diffraction （XRD） and room-temperature （RT） photolu- minescence （PL） were employed to characterize the quality of InP epilayer. The best scheme of growing InP/GaAs（100） heterostructures was obtained by optimizing the initial low-temperature （LT） InP growth conditions, investigating the effects of thermal cycle annealing （TCA） and strained layer superlattice （SLS） on InP epilayers. Compared with annealing, 10-periods Ga0.1In0.9P/InP SLS inserted into InP epilayers can improve the quality of epilayers dramatically, by this means, for 2.6-#m-thick heteroepitaxial InP, the full-widths at half-maximum （FWHMs） of XRD ω and ω-28 scans are 219 and 203 arcsec, respectively, the RT PL spectrum shows the band edge transition of InP, the FWHM is 42 meV. In addition, the successful growth of InP/In0.53Ga0.47As MQWs on GaAs（100） substrates indicates the quality of device demand of InP/GaAs heterostructures.展开更多
文摘对无线网络半年数据流量进行采集分析,制作基站级栅格化数据流量密度图,结合现网无线局域网(WLAN,Wireless Local Area Networks)热点的建设情况、WLAN热点的忙闲情况、现网全球移动通信系统(GSM,Global System For Mobile Communications)无线利用率情况、载频配置情况,提出一种以现网高数据流量、高无线利用率为导向,分不同场景而进行WLAN选点的方法。该方法能紧跟业务发展需求,确保网络资源利用率,能使WLAN精确建网,避免热建冷用,有效分流GSM网络流量。
基金This work was supported by the National Basic Research Program of China(No.2003CB314901)the 111 Project(B07005)the Program for New Century Excellent Talents in University of China(NCET-05-0111).
文摘Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low- temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 （μm） exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit （OEIC） devices.
基金This work was supported by the National Basic Research Program of China(No.2003CB314901)the Program for New Century Excellent Talents in University(No.NCET-05-0111)the National Natural Science Foundation of China(No.60576018).
文摘Using two-step method InP epilayers were grown on GaAs（100） substrates by low-pressure metalorganic chemical vapor deposition （LP-MOCVD）. X-ray diffraction （XRD） and room-temperature （RT） photolu- minescence （PL） were employed to characterize the quality of InP epilayer. The best scheme of growing InP/GaAs（100） heterostructures was obtained by optimizing the initial low-temperature （LT） InP growth conditions, investigating the effects of thermal cycle annealing （TCA） and strained layer superlattice （SLS） on InP epilayers. Compared with annealing, 10-periods Ga0.1In0.9P/InP SLS inserted into InP epilayers can improve the quality of epilayers dramatically, by this means, for 2.6-#m-thick heteroepitaxial InP, the full-widths at half-maximum （FWHMs） of XRD ω and ω-28 scans are 219 and 203 arcsec, respectively, the RT PL spectrum shows the band edge transition of InP, the FWHM is 42 meV. In addition, the successful growth of InP/In0.53Ga0.47As MQWs on GaAs（100） substrates indicates the quality of device demand of InP/GaAs heterostructures.
