摘要
介绍了一种GaAs基的长波长谐振腔增强型(RCE)光探测器。通过两步生长法,在GaAs衬底上异质外延生长了InP-InGaAs-InP的p-i-n光吸收结构和GaAs/AlAs的分布布拉格反射镜(DBR)。所制备的器件在1549.4nm处获得了67.3%的量子效率和17nm的光谱响应线宽,在1497.7nm处获得了53.5%的量子效率和9.6nm的光谱响应线宽,而InGaAs吸收层厚度仅为200nm。采用单片集成法,工艺简单、易于产业化,随着缓冲层技术的发展,此种RCE光探测器的性能还将获得进一步提升。
A long wavelength resonant-cavity-enhanced photodetector was demonstrated, by heteroepitaxy, the InP-InGaAs-InP p-i-n structure on GaAs substrate, and GaAs/AlAs distributed Bragg reflectors （DBR） were grown. High quality heteroepitaxy was realized by two-step growth. External quantum efficiency of 67.3% at 1 549.4 nm with spectrum response linewidth of 17 nm, and 53.5% at 1 497.7 nm are obtained in the device with an InGaAs absorption layer thickness of 200 nm. Because of its monolithically integrated structure, the simple process of the photodetector has large potential of industrialization. With the development of low temperature buffer technology, the performance of this kind of RCE photodetector will surely be improved in the future.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第5期442-445,共4页
Semiconductor Technology
关键词
异质外延
光探测器
谐振腔
单片集成
量子效率
heteroepitaxy
photodetector
resonant cavity
monolithic integration
quantum efficiency
