摘要
The Si tandem solar cells are very attractive for realizing high efficiency and low cost. This paper overviews current status of III-V/Si tandem solar cells including our results. The analytical results for efficiency potential of Si tandem solar cells and loss analysis of Si bottom cells as well as bandgap energy optimization of sub-cells are presented. The 2-junction and 3-junction Si tandem solar cells have potential efficiencies of 36% and 42%, respectively. ERE (external radiative efficiency) analysis for Si solar cells is analyzed in or</span><span style="font-family:Verdana;">der to clarify properties of Si bottom solar cells. Properties of single-crystalline Si heterojunction solar cell</span><span style="font-family:Verdana;"> fabricated in this study were analyzed. The current </span><span><span style="font-family:Verdana;">status of efficiencies of our Si bottom cell, upper III-V 2-junction solar cell and III-V/Si 3-junction tandem solar cell was shown to be 5.2% and 28.6% and 33.8%. Achievement of </span><span style="white-space:nowrap;font-family:Verdana;"><i></span><span style="font-family:Verdana;"></span><i><span style="font-family:Verdana;">J</span><sub><span style="font-family:Verdana;">sc</span><span style="white-space:nowrap;font-family:Verdana;"></i></span><span style="font-family:Verdana;"></span></sub></i><span style="font-family:Verdana;"> of 12 mA/cm</span><sup><span style="font-family:Verdana;">2</span></sup><span style="font-family:Verdana;"> for Si bottom cell is necessary to realize high-efficiency 3-junction Si tandem solar cells with an efficiency of</span></span><span style="font-family:Verdana;"> more than 37%. In addition, this paper presents ERE analysis of III-V 2-junction upper solar cells for improving III-V/Si 3-junction tandem solar cells. Several ways to improve efficiency of III-V/Si 3-junction tandem solar cells by reducing non-radiative recombination, optical and resistance losses are shown.
The Si tandem solar cells are very attractive for realizing high efficiency and low cost. This paper overviews current status of III-V/Si tandem solar cells including our results. The analytical results for efficiency potential of Si tandem solar cells and loss analysis of Si bottom cells as well as bandgap energy optimization of sub-cells are presented. The 2-junction and 3-junction Si tandem solar cells have potential efficiencies of 36% and 42%, respectively. ERE (external radiative efficiency) analysis for Si solar cells is analyzed in or</span><span style="font-family:Verdana;">der to clarify properties of Si bottom solar cells. Properties of single-crystalline Si heterojunction solar cell</span><span style="font-family:Verdana;"> fabricated in this study were analyzed. The current </span><span><span style="font-family:Verdana;">status of efficiencies of our Si bottom cell, upper III-V 2-junction solar cell and III-V/Si 3-junction tandem solar cell was shown to be 5.2% and 28.6% and 33.8%. Achievement of </span><span style="white-space:nowrap;font-family:Verdana;"><i></span><span style="font-family:Verdana;"></span><i><span style="font-family:Verdana;">J</span><sub><span style="font-family:Verdana;">sc</span><span style="white-space:nowrap;font-family:Verdana;"></i></span><span style="font-family:Verdana;"></span></sub></i><span style="font-family:Verdana;"> of 12 mA/cm</span><sup><span style="font-family:Verdana;">2</span></sup><span style="font-family:Verdana;"> for Si bottom cell is necessary to realize high-efficiency 3-junction Si tandem solar cells with an efficiency of</span></span><span style="font-family:Verdana;"> more than 37%. In addition, this paper presents ERE analysis of III-V 2-junction upper solar cells for improving III-V/Si 3-junction tandem solar cells. Several ways to improve efficiency of III-V/Si 3-junction tandem solar cells by reducing non-radiative recombination, optical and resistance losses are shown.
