摘要
本文采用射频磁控溅射法在玻璃衬底表面制备了Al2O3掺杂的ZnO薄膜(AZO膜),使用四探针薄膜方阻仪、XRD和分光光度计对AZO薄膜光电性能进行了表征分析。研究了制备参数和退火条件对AZO薄膜光电性能的影响,获得了制备高透过率(90%)和低方阻(15 Ω/□) AZO薄膜最佳工艺参数。
In this paper, ZnO thin films doped Al2O3 (AZO) were prepared on glass substrate by radio fre-quency magnetron sputtering. The photoelectric properties of AZO thin films were characterized by four-point probe, XRD and spectrophotometer. The optimal sputtering and annealing parameters for the best performance AZO thin films with transmittance up to 90% and square resistance as low as 15 Ω/□ were obtained.
出处
《材料科学》
2018年第4期401-411,共11页
Material Sciences
基金
广东省科技计划项目(编号2017A010103021).
