摘要
采用模压和真空热压烧结工艺制备了钼铌和钼钽两种钼合金靶材,以薄膜半导体-液晶显示器(TFTLCD)无碱玻璃为衬底,磁控溅射沉积了不同厚度的钼薄膜。利用场发射扫描电镜和共聚焦显微镜表征了靶材显微组织、元素面分布以及薄膜微观形貌。借助四探针测试仪测试了薄膜的方阻值,研究了铌和钽合金化对钼薄膜导电性的影响。研究结果表明:铌、钽合金化均可细化靶材晶粒,且靶材晶粒均无明显择优取向。钼铌和钼钽两种合金靶材平均晶粒尺寸分别为70.02μm和34.43μm。相同溅射工艺参数下,钼铌和钼钽合金薄膜厚度分别约为200 nm和240 nm。钼铌合金薄膜平均方阻为15.68Ω/□,钼钽合金薄膜平均方阻为22.00Ω/□。钽合金化后,钼靶材晶粒细化更为显著,晶粒尺寸分布更加均匀,薄膜沉积速度更快,且表面粗糙度较小,导致钼钽合金薄膜方阻增长较大。
Mo-Nb and Mo-Ta alloy targets were fabricated by mould pressing and vacuum hot-pressing sintering technology. Mo films with different thicknesses were deposited on thin film transistor-liquid crystal display( TFT-LCD) alkali-free glass substrates by magnetron sputtering. The microstructure,elements surface distribution of targets and micromorphology of thin films were characterized by field-emission scanning electron microscope and confocal microscopy. The sheet resistance was measured by four-point probes meter. The effects of Nb and Ta alloying on the conductivity of thin film were studied. The results indicate that the grains in both Nb and Ta alloying targets are refined,and neither of them has obvious preferred orientation. The average grain sizes of Mo-Nb and Mo-Ta alloy targets are 70. 02 μm and 34. 43 μm,respectively. The thicknesses of Mo-Nb and Mo-Ta alloy films,deposited with the same sputtering process parameters,are about 200 nm and 240 nm,respectively. The average sheet resistance of Mo-Nb alloy film is 15. 68 Ω/□,whereas that of Mo-Ta alloy film is 22. 00 Ω/□. With Ta alloying,Mo target grains refine obviously and grain sizes distributing is uniformly.Mo-Ta alloy film grows faster and its surface is relatively smooth,contributing to the sheet resistance increasing larger.
出处
《河南科技大学学报（自然科学版）》
CAS
北大核心
2018年第3期1-6,共6页
Journal of Henan University of Science And Technology:Natural Science
基金
国家自然科学基金项目(51672070)
关键词
钼靶材
铌钽合金化
靶材组织
薄膜结构
方阻
Mo target
Nb and Ta alloying
target microstructure
thin film texture
sheet resistance
